Glen D. Wilk

发表

Surface preparation, growth, and characterization of ultrathin gate oxides for scaled CMOS applications

Glen D. Wilk, 1997, Advanced Lithography.

Current-transport properties of atomic-layer-deposited ultrathin Al2O3 on GaAs

Peide D. Ye, Glen D. Wilk, H. C. Lin, 2006 .

SiO2 film thickness metrology by x-ray photoelectron spectroscopy

Robert M. Wallace, Leonard C. Feldman, Glen D. Wilk, 1997 .

Beyond-The-Roadmap Technology: Silicon Heterojunctions, Optoelectronics, and Quantum Devices

Bobby Brar, Roger K. Lake, Alan Seabaugh, 1997 .

Atomic layer deposited TaCy metal gates: Impact on microstructure, electrical properties, and work function on HfO2 high-k dielectrics

Glen D. Wilk, Dina H. Triyoso, D. Werho, 2007 .

ELECTRICAL PROPERTIES OF HAFNIUM SILICATE GATE DIELECTRICS DEPOSITED DIRECTLY ON SILICON

Robert M. Wallace, Glen D. Wilk, R. Wallace, 1999 .

Stable zirconium silicate gate dielectrics deposited directly on silicon

Robert M. Wallace, Glen D. Wilk, R. Wallace, 2000 .

HfO2 and Al2O3 gate dielectrics on GaAs grown by atomic layer deposition

David A. Muller, Martin M. Frank, Dmitri Starodub, 2005 .

50 nm Vertical Replacement-Gate (VRG) pMOSFETs

T. Nigam, James D. Plummer, J. F. Miner, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Correlation of annealing effects on local electronic structure and macroscopic electrical properties for HfO2 deposited by atomic layer deposition

David A. Muller, Glen D. Wilk, D. Muller, 2003 .

GaN metal-oxide-semiconductor high-electron-mobility-transistor with atomic layer deposited Al2O3 as gate dielectric

Peide D. Ye, James C. M. Hwang, J. Bude, 2005 .

Nucleation and interface formation mechanisms in atomic layer deposition of gate oxides

Martin M. Frank, Glen D. Wilk, Yves J. Chabal, 2003 .

High-κ Dielectric Materials for Microelectronics

Robert M. Wallace, Glen D. Wilk, R. Wallace, 2003 .

Processing and Characterization of III–V Compound Semiconductor MOSFETs Using Atomic Layer Deposited Gate Dielectrics

Peide D. Ye, Glen D. Wilk, M. M. Frank, 2007 .

Direct extraction of the electron tunneling effective mass in ultrathin SiO2

B. Brar, Alan Seabaugh, Glen D. Wilk, 1996 .

GaAs metal–oxide–semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition

Peide D. Ye, J. P. Mannaerts, J. Bude, 2003 .

Enhanced initial growth of atomic-layer-deposited metal oxides on hydrogen-terminated silicon

Martin M. Frank, Annelies Delabie, Bert Brijs, 2003 .

Multi-component high-K gate dielectrics for the silicon industry

Fred P. Klemens, Martin L. Green, Glen D. Wilk, 2001 .

Leakage current and breakdown electric-field studies on ultrathin atomic-layer-deposited Al2O3 on GaAs

Peide D. Ye, Glen D. Wilk, H. C. Lin, 2005 .