Eduard Hulicius

发表

Microwave radiation absorption and Shubnikov: de Haas oscillations in semi-metal InAs/GaSb/AlSb composite quantum wells

Igor V. Kochman, Maya P. Mikhaliova, A. I. Veinger, 2016, SPIE OPTO.

Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots

Pavel Hazdra, J. Oswald, Eduard Hulicius, 2007, Microelectron. J..

Devices based on InGaN/GaN multiple quantum well for scintillator and detector applications

Michael Heuken, Martin Nikl, Christophe Dujardin, 2016, Conference on Sensors, MEMS and Electro-Optic Systems.

Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE

Jan Vanis, Filip Sroubek, Mohamed Henini, 2009, Microelectron. J..

Low–Frequency Noise Measurements Used For Quality Assessment Of GaSb Based Laser Diodes Prepared By Molecular Beam Epitaxy

Eduard Hulicius, Ivo Kusák, Zdeněk Chobola, 2015 .

Microwave radiation absorption and Shubnikov-de Haas oscillations in semimetal InAs/GaSb/AlSb composite quantum wells

Maya P. Mikhailova, Anatoly I. Veinger, Igor V. Kochman, 2016 .

NANOTECHNOLOGY IN GENERAL AND QUANTUM DOTS AS AN INTERESTING EXAMPLE

Eduard Hulicius, 2013 .

Intense interface luminescence in type II narrow-gap InAs-based heterostructures at room temperature

Eduard Hulicius, Maya Mikhailova, M. Mikhailova, 2010 .

InAs/GaSb/AlSb composite quantum well structure preparation with help of reflectance anisotropy spectroscopy

Maya P. Mikhailova, Igor V. Kochman, A. I. Veinger, 2017 .

Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Edward A. Preble, Tanja Paskova, Eduard Hulicius, 2012 .

Vertical transport in type-II heterojunctions with InAs/GaSb/AlSb composite quantum wells in a high magnetic field

L. V. Danilov, Alice Hospodková, Jiří Pangrác, 2017 .

Origin of recombination transitions at the lattice‐matched GaInAsSb‐GaSb n‐N type‐II heterojunctions

Jiri Oswald, Jiří Pangrác, Eduard Hulicius, 1994 .

Ballistic electron emission spectroscopy/microscopy of self-assembled InAs quantum dots of different sizes embedded in GaAs∕AlGaAs heterostructure

Filip Sroubek, Jiří Pangrác, Eduard Hulicius, 2008 .

Influence of humidity on transport in porous silicon

Eduard Hulicius, J. Kristofik, J. J. Mareš, 1995 .

InGaN/GaN multiple quantum well for fast scintillation application: radioluminescence and photoluminescence study

Michael Heuken, Martin Nikl, Alice Hospodková, 2014, Nanotechnology.

Room-temperature electroluminescence of AlSb/InAsSb single quantum wells grown by metal organic vapor phase epitaxy

K. D. Moiseev, Maya P. Mikhailova, Evgenii V. Ivanov, 2006 .

SUPERLINEAR ELECTROLUMINESCENCE DUE TO IMPACT IONIZATION IN GASB-BASED HETEROSTRUCTURES WITH DEEP AL(AS)SB/INASSB/AL(AS)SB QUANTUM WELLS

N. D. Stoyanov, Maya P. Mikhailova, Evgenii V. Ivanov, 2012 .

Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures

N. D. Stoyanov, K. D. Moiseev, Yu. P. Yakovlev, 1999 .

Study of InAs quantum dots in AlGaAs∕GaAs heterostructure by ballistic electron emission microscopy/spectroscopy

Filip Sroubek, Jiří Pangrác, Eduard Hulicius, 2007 .

Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy

Pavel Hubík, Jiří Pangrác, Eduard Hulicius, 2004 .