Charles Scozzie

发表

Large area silicon carbide vertical JFETs for 1200 V cascode switch operation

Jeremy Junghans, H. Hearne, Victor Veliadis, 2008 .

A 1680-V (at 1 $\hbox{mA/cm}^{2}$ ) 54-A (at 780 $\hbox{W/cm}^{2}$ ) Normally ON 4H-SiC JFET With 0.143- $\hbox{cm}^{2}$ Active Area

H. Hearne, Victor Veliadis, Ty McNutt, 2008 .

15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors

Lin Cheng, Anant K. Agarwal, John W. Palmour, 2013 .

4H-SiC bipolar junction transistors: From research to development - A case study: 1200 V, 20 A, stable SiC BJTs with high blocking yield

John Palmour, Robert Callanan, Anant Agarwal, 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

High Temperature Stressing of Sic JFETs at 300°C

Charles Scozzie, C. Wesley Tipton, W. Merle DeLancey, 1994 .

20 kV, 2 cm2, 4H-SiC gate turn-off thyristors for advanced pulsed power applications

Lin Cheng, Anant K. Agarwal, Edward Van Brunt, 2013, 2013 Abstracts IEEE International Conference on Plasma Science (ICOPS).

9 kV, 1 cm2 SiC Gate Turn-Off Thyristors

Anant K. Agarwal, John W. Palmour, Robert Callanan, 2010 .

4H–SiC BJTs with current gain of 110

Anant K. Agarwal, Charles Scozzie, Qingchun Zhang, 2008 .

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC

Anant K. Agarwal, John W. Palmour, Robert Callanan, 2010 .

Strategic Overview of High-Voltage SiC Power Device Development Aiming at Global Energy Savings

Alex Q. Huang, David E. Grider, Lin Cheng, 2014 .

27 kV, 20 A 4H-SiC n-IGBTs

Lin Cheng, C. W. Tipton, John W. Palmour, 2015 .

600-V / 2-A Symmetrical Bi-Directional Power Flow Using Vertical-Channel JFETs Connected in Common Source Configuration

Robert S. Howell, Damian Urciuoli, Harold Hearne, 2010 .

Ultra High Voltage SiC Power Devices and Its Impact on Future Power Delivery System

Alex Q. Huang, Lin Cheng, John W. Palmour, 2014 .

Modeling the temperature response of 4H silicon carbide junction field-effect transistors

Charles Scozzie, F. B. McLean, J. M. McGarrity, 1997 .

3.7 mΩ-cm2, 1500 V 4H-SiC DMOSFETs for advanced high power, high frequency applications

Lin Cheng, Sei-Hyung Ryu, John Palmour, 2011, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.

1200 V 4H-SiC Bipolar Junction Transistors with A Record β of 70

Anant K. Agarwal, Robert Callanan, Charles Scozzie, 2008 .

Modeling the electrical characteristics of n‐channel 6H–SiC junction‐field‐effect transistors as a function of temperature

C. W. Tipton, Charles Scozzie, F. B. McLean, 1996 .

Static and dynamic characterization of a >13kV SiC p-ETO device

Alex Q. Huang, Gangyao Wang, Lin Cheng, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Analysis of neutron damage in high-temperature silicon carbide JFETs

C. W. Tipton, Charles Scozzie, C. Scozzie, 1994 .

12 kV, 1 cm2 SiC GTO Thyristors with Negative Bevel Termination

Lin Cheng, Anant K. Agarwal, Michael E. Levinshtein, 2012 .

Critical Issues for MOS Based Power Devices in 4H-SiC

Anant K. Agarwal, Aivars J. Lelis, Charles Scozzie, 2009 .

Safe Operating Area and Long-Term Reliability of 9-kV Silicon Carbide PNPN Super Gate Turn-Off Thyristors

Stephen B. Bayne, Lin Cheng, Kevin Lawson, 2014, IEEE Electron Device Letters.

Development of 1200 V, 3.7 mΩ-cm2 4H-SiC DMOSFETs for Advanced Power Applications

Lin Cheng, Anant K. Agarwal, Aivars J. Lelis, 2012 .

Static and Dynamic Performance Evaluation of >13 kV SiC-ETO and its Application as a Solid-State Circuit Breaker

Alex Q. Huang, Gangyao Wang, Lin Cheng, 2014 .

A 1680-V (at 1 {mA/cm}(2) ) 54-A (at 780 {W/cm}(2) ) Normally ON 4H-SiC JFET With 0.143- {cm}(2) Active Area

H. Hearne, Victor Veliadis, T. McNutt, 2008 .

Performance, Reliability, and Robustness of 4H-SiC Power DMOSFETs

Anant K. Agarwal, Aivars J. Lelis, John W. Palmour, 2010 .

High-Mobility Stable 1200-V, 150-A 4H-SiC DMOSFET Long-Term Reliability Analysis Under High Current Density Transient Conditions

Stephen B. Bayne, Lin Cheng, Argenis Bilbao, 2015, IEEE Transactions on Power Electronics.

Silicon carbide FETs for high temperature nuclear environments

Charles Scozzie, C. Scozzie, J. McGarrity, 1996 .