Karol Fröhlich

On Passive Permutation Circuits

Peter Jancovic, Martin Klimo, Eike Linn, 2015, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.

Precise determination of metal effective work function and fixed oxide charge in MOS capacitors with high-κ dielectric

Ladislav Harmatha, Karol Fröhlich, M. Ťapajna, 2006 .

Modeling of the switching I-V characteristics in ultrathin (5 nm) atomic layer deposited HfO2 films using the logistic hysteron

Jordi Suñé, Enrique Miranda, Karol Fröhlich, 2015 .

Interface engineered HfO2-based 3D vertical ReRAM

Tuo-Hung Hou, I-Ting Wang, Che-Chia Chang, 2016 .

Influence of oxygen-plasma treatment on AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 by atomic layer deposition: leakage current and density of states reduction

Peter Kordos, Tamotsu Hashizume, M. Blaho, 2017 .

Resistive switching in HfO2-based atomic layer deposition grown metal–insulator–metal structures

Edmund Dobročka, Karol Fröhlich, Peter Jančovič, 2014 .