Katsumi Maeda

Sub 0.1 μm ArF excimer laser lithography with alternating phase-shifting masks

Jun Ushioda, Yuko Seki, Hiroyoshi Tanabe, 1995, Photomask and Next Generation Lithography Mask Technology.

Dissolution behavior of alicyclic polymers designed for ArF excimer laser lithography

Katsumi Maeda, Takeshi Ohfuji, Kaichiro Nakano, 1996, Advanced Lithography.

Transparent photoacid generator (ALS) for ArF excimer laser lithography and chemically amplified resist

Jun-ichi Yano, Yukio Ogura, Katsumi Maeda, 1994, Advanced Lithography.

High-resolution surface imaging process using difunctional silylating reagent B(DMA)MS for ArF excimer laser lithography

Katsumi Maeda, Takeshi Ohfuji, Etsuo Hasegawa, 1995, Advanced Lithography.

Function-integrated alicyclic polymer for ArF chemically amplified resists

Katsumi Maeda, Shigeyuki Iwasa, Kaichiro Nakano, 1997, Advanced Lithography.

Positive chemically amplified resist for ArF excimer laser lithography composed of a novel transparent photoacid generator and an alicyclic terpolymer

Katsumi Maeda, Takeshi Ohfuji, Shigeyuki Iwasa, 1995, Advanced Lithography.

Adhesion characteristics of alicyclic polymers for use in ArF excimer laser lithography

Katsumi Maeda, Shigeyuki Iwasa, Kaichiro Nakano, 1998, Advanced Lithography.