F. Boulanger

发表

Guidelines to improve mobility performances and BTI reliability of advanced high-k/metal gate stacks

X. Garros, G. Reimbold, C. Leroux, 2008, 2008 Symposium on VLSI Technology.

Test structure for characterizing metal thickness in damascene CMP technology

L. Arnaud, A. Toffoli, F. de Crecy, 2008, 2008 IEEE International Conference on Microelectronic Test Structures.

Highly automated sequence for Phase Change Memory test structure characterization

G. Reimbold, B. DeSalvo, J. Cluzel, 2010, 2010 International Conference on Microelectronic Test Structures (ICMTS).

Process dependence of BTI reliability in advanced HK MG stacks

M. Rafik, Mikaël Casse, Gilles Reimbold, 2009, Microelectron. Reliab..

Modeling of program, erase and retention characteristics of charge-trap gate all around memories

Gerard Ghibaudo, Etienne Nowak, Luca Perniola, 2011 .

High-k/metal Gate GeOI pMOSFET: Validation of the Lim&Fossum model for interface trap density extraction

X. Garros, Emmanuel Augendre, M. Vinet, 2008 .

Investigation of mechanisms shifting metal effective workfunction towards P+ for various Al incorporation scenarii

G. Reimbold, G. Ghibaudo, C. Leroux, 2010, Proceedings of 2010 International Symposium on VLSI Technology, System and Application.

On the Influence of Fin Corner Rounding in 3D Nanocrystal Flash Memories

G. Reimbold, G. Ghibaudo, L. Perniola, 2008, 2008 Joint Non-Volatile Semiconductor Memory Workshop and International Conference on Memory Technology and Design.

In-depth analysis of 3D Silicon nanowire SONOS memory characteristics by TCAD simulations

G. Reimbold, G. Ghibaudo, T. Ernst, 2010, 2010 IEEE International Memory Workshop.

Modeling and direct extraction of band offset induced by stress engineering in silicon-on-insulator metal-oxide-semiconductor field effect transistors: Implications for device reliability

X. Garros, G. Reimbold, F. Andrieu, 2009 .

Impact of crystallinity of High-k oxides on Vt instabilities of NMOS devices assessed by physical and electrical measurements

X. Garros, G. Reimbold, T. Salvetat, 2008, 2008 IEEE International Reliability Physics Symposium.

New insight on the charge trapping mechanisms of SiN-based memory by atomistic simulations and electrical modeling

G. Reimbold, D. Lafond, E. Vianello, 2009, 2009 IEEE International Electron Devices Meeting (IEDM).

Investigation on trapping and detrapping mechanisms in HfO2 films

G. Reimbold, G. Ghibaudo, J. Mitard, 2005 .

Carbon-doped GeTe Phase-Change Memory featuring remarkable RESET current reduction

G. Reimbold, D. Blachier, A. Toffoli, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Insights on fundamental mechanisms impacting Ge metal oxide semiconductor capacitors with high-k/metal gate stacks

X. Garros, P. Batude, S. Deleonibus, 2007 .

Detrimental impact of technological processes on BTI reliability of advanced high-K/metal gate stacks

X. Garros, G. Reimbold, C. Fenouillet-Beranger, 2009, 2009 IEEE International Reliability Physics Symposium.

Piezoresistance effect of strained and unstrained fully-depleted silicon-on-insulator MOSFETs integrating a HfO2/TiN gate stack

Gerard Ghibaudo, M. Casse, Mireille Mouis, 2009 .

Improved GeOI substrates for pMOSFET off-state leakage control

Emmanuel Augendre, Sorin Cristoloveanu, Eric Guiot, 2009 .

Influence of TiN metal gate on Si/SiO2 surface roughness in N and PMOSFETs

G. Reimbold, M. Casse, Mireille Mouis, 2005 .

Dielectric Conduction Mechanisms of Advanced Interconnects: Evidence for Thermally- Induced 3D /2 D Transition

G. Reimbold, L. Arnaud, V. Arnal, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Electron mobility enhancement in uniaxially strained MOSFETs: Extraction of the effective mass variation

G. Reimbold, D. Blachier, M. Casse, 2006, 2006 European Solid-State Device Research Conference.

High performance 70 nm gate length germanium-on-insulator pMOSFET with high-k/metal gate

X. Garros, G. Reimbold, Emmanuel Augendre, 2009 .

On Carbon doping to improve GeTe-based Phase-Change Memory data retention at high temperature

G. Reimbold, D. Blachier, A. Toffoli, 2010, 2010 IEEE International Memory Workshop.

N-doped GeTe as performance booster for embedded Phase-Change Memories

G. Reimbold, D. Blachier, A. Toffoli, 2010, 2010 International Electron Devices Meeting.

PBTI mechanisms in La containing Hf-based oxides assessed by very Fast IV measurements

X. Garros, M. Rafik, A. Bravaix, 2010, 2010 International Electron Devices Meeting.

A comprehensive study of magnetoresistance mobility in short channel transistors: Application to strained and unstrained silicon-on-insulator field-effect transistors

Gilles Reimbold, Gerard Ghibaudo, Francois Andrieu, 2009 .

New insight on VT stability of HK/MG stacks with scaling in 30nm FDSOI technology

X. Garros, G. Reimbold, O. Faynot, 2010, 2010 Symposium on VLSI Technology.

Analysis by simulation of amorphization current in phase change memory applied to pillar and GST confined type cells

Sylvain Maitrejean, A. Toffoli, L. Perniola, 2011 .