M. Denais

发表

65nm LP/GP mix low cost platform for multi-media wireless and consumer applications

Nicolas Planes, Frederic Boeuf, Pierre Morin, 2005 .

High-k dielectrics breakdown accurate lifetime assessment methodology

G. Ribes, M. Denais, D. Roy, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Origin of Vt instabilities in high-k dielectrics Jahn-Teller effect or oxygen vacancies

G. Ghibaudo, T. Skotnicki, G. Ribes, 2006, IEEE Transactions on Device and Materials Reliability.

Design-In Reliability for 90-65nm CMOS Nodes Submitted to Hot-Carriers and NBTI Degradation

M. Denais, Vincent Huard, C. Guérin, 2007, PATMOS.

A thorough investigation of MOSFETs NBTI degradation

M. Denais, Vincent Huard, Nathalie Revil, 2005, Microelectron. Reliab..

Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides

G. Ribes, M. Denais, Vincent Huard, 2005, Microelectron. Reliab..

Impacts of the recovery phenomena on the worst-case of damage in DC/AC stressed ultra-thin NO gate-oxide MOSFETs

M. Denais, Vincent Huard, Didier Goguenheim, 2005, Microelectron. Reliab..

New perspectives on NBTI in advanced technologies: modelling & characterization

G. Ribes, M. Denais, A. Bravaix, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Low cost 65nm CMOS platform for Low Power & General Purpose applications

M. Woo, N. Planes, R. Palla, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Designing in reliability in advanced CMOS technologies

G. Ribes, M. Denais, Vincent Huard, 2006, Microelectron. Reliab..

Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown

G. Ribes, M. Denais, Gérard Ghibaudo, 2005, Microelectron. Reliab..

Characterization and modeling NBTI for design-in reliability

G. Ribes, M. Denais, A. Bravaix, 2005, 2005 IEEE International Integrated Reliability Workshop.

Interface traps and oxide traps under NBTI and PBTI in advanced CMOS technology with a 2nm gate-oxide

G. Ribes, M. Denais, Alain Bravaix, 2003, IEEE International Integrated Reliability Workshop Final Report, 2003.

Paradigm Shift for NBTI Characterization in Ultra-Scaled CMOS Technologies

G. Ribes, M. Denais, A. Bravaix, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

ImpactofHotCarrier Degradation Modeson I/OnMOSFETSAgingPrediction

M. Denais, Alain Bravaix, V. Huard, 2006 .

NBTI degradation: From physical mechanisms to modelling

M. Denais, Vincent Huard, C. R. Parthasarathy, 2006, Microelectron. Reliab..

65nm LP/GP mix low cost platform for multi-media wireless and consumer applications

P. Abramowitz, M. Woo, N. Planes, 2005, Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005..

Low temperature process flow optimisation for 65nm CMOS mixed-signal applications

B. Tavel, M. Bidaud, M. Denais, 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

Characterization of Vt instability in hafnium based dielectrics by pulse gate voltage techniques [CMOS device applications]

G. Ghibaudo, T. Skotnicki, G. Ribes, 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

Oxide field dependence of interface trap generation during negative bias temperature instability in PMOS

N. Revil, G. Ribes, M. Denais, 2004, IEEE International Integrated Reliability Workshop Final Report, 2004.

Breakdown mechanisms in ultra-thin Oxides: impact of carrier energy and current through substrate hot carrier stress study

Gerard Ghibaudo, G. Ribes, M. Denais, 2004 .

Unified Perspective of NBTI and Hot-Carrier Degradation in CMOS using on-the-Fly Bias Patterns

G. Ribes, M. Denais, V. Huard, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Physical origin of Vt instabilities in high-k dielectrics and process optimisation

G. Ghibaudo, T. Skotnicki, G. Ribes, 2005, 2005 IEEE International Integrated Reliability Workshop.

Modelling charge to breakdown using hydrogen multivibrational excitation (thin SiO/sub 2/ and high-k dielectrics) [MOS devices]

G. Ghibaudo, G. Ribes, M. Denais, 2004, IEEE International Integrated Reliability Workshop Final Report, 2004.

Combined effect of NBTI and channel hot carrier effects in pMOSFETs

M. Denais, V. Huard, A. Bravaix, 2005, 2005 IEEE International Integrated Reliability Workshop.

MVHR (multi-vibrational hydrogen release): consistency with bias temperature instability and dielectrics breakdown [MOS devices]

G. Ghibaudo, G. Ribes, M. Denais, 2005, 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..

Thin oxynitride solution for digital and mixed-signal 65nm CMOS platform

N. Planes, N. Revil, B. Tavel, 2003, IEEE International Electron Devices Meeting 2003.

Gate stack optimization for 65 nm CMOS low power and high performance platform

R. Palla, B. Tavel, C. Ortolland, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Impact of Hot Carrier Degradation Modes on I/O nMOSFETS Aging Prediction

M. Denais, V. Huard, A. Bravaix, 2006, 2006 IEEE International Integrated Reliability Workshop Final Report.