Diego G. Dupouy

The inner workings of phase change memory: Lessons from prototype PCM devices

Kailash Gopalakrishnan, Alvaro Padilla, John Karidis, 2010, 2010 IEEE Globecom Workshops.

Voltage polarity effects in Ge2Sb2Te5-based phase change memory devices

Kumar Virwani, Philip M. Rice, Kailash Gopalakrishnan, 2011 .