C. K. Inoki

发表

Characterization of GaN epitaxial films grown on SiNx and TiNx porous network templates

D. J. Smith, Ü. Özgür, J. Xie, 2006, SPIE OPTO.

Low dislocation density GaN grown by MOCVD with SiNx nano-network

John V. Foreman, Hadis Morkoç, Ümit Özgür, 2007, SPIE OPTO.

Dislocation Mechanisms in the GaN Lateral Overgrowth by Hydride Vapor Phase Epitaxy

Shulin Gu, Rong Zhang, Thomas F. Kuech, 1999 .

Step Formation on Hydrogen-etched 6H-SiC{0001} Surfaces

Gong Gu, C. D. Lee, Robert P. Devaty, 2008 .

Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides

Fritz J. Kub, Phillip E. Thompson, Karl D. Hobart, 2000 .

Fabrication and Performance Limits of Sub-0.1 µm Cu Interconnects

Yiping Zhao, K. Rose, Tung-Sheng Kuan, 2000 .

Dislocation reduction in GaN grown on porous TiN networks by metal-organic vapor-phase epitaxy

C. K. Inoki, H. Morkoç, David J. Smith, 2006 .

Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy

C. K. Inoki, H. Morkoç, Y. Moon, 2005 .

SiGe relaxation on silicon-on-insulator substrates: An experimental and modeling study

C. K. Inoki, T. Kuech, E. Rehder, 2003 .

Selective Nucleation and Growth of Large Grain Polycrystalline GaAs

C. G. Allen, C. K. Inoki, R. Caputo, 2005 .

Damage of ultralow k materials during photoresist mask stripping process

C. K. Inoki, E. Iacob, Wen-Li Wu, 2006 .

Plasma-surface interactions of nanoporous silica during plasma-based pattern transfer using C4F8 and C4F8/Ar gas mixtures

C. K. Inoki, G. Oehrlein, T. Kuan, 2004 .

Role of Ga flux in dislocation reduction in GaN films grown on SiC(0001)

C. D. Lee, C. K. Inoki, L. Salamanca-Riba, 2001 .

Strain determination in InxGa1−xAs/GaAs strained‐layer superlattices by photomodulated reflectance

C. K. Inoki, F. Cerdeira, V. Lemos, 1993 .

Plasma-assisted molecular beam epitaxy of GaN on porous SiC substrates with varying porosity

C. D. Lee, C. K. Inoki, T. Kuan, 2003 .

Growth of GaN films on porous SiC substrate by molecular-beam epitaxy

C. K. Inoki, H. Morkoç, T. Kuan, 2002 .

Lateral epitaxial overgrowth of GaSb on GaSb and GaAs substrates by metalorganic chemical vapor deposition

C. K. Inoki, T. Kuech, T. Kuan, 2000 .

Formation of regular arrays of submicron GaAs dots on silicon

C. K. Inoki, R. Caputo, T. Kuech, 2004 .

Strain relaxation of SiGe islands on compliant oxide

C. K. Inoki, Z. Suo, J. Sturm, 2002 .

Dislocation density reduction in GaN using porous SiN interlayers

C. K. Inoki, H. Morkoç, Y. Moon, 2005 .

Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy

C. K. Inoki, H. Morkoç, David J. Smith, 2005 .

Morphology and Effects of Hydrogen Etching of Porous SiC

C. D. Lee, C. K. Inoki, T. Kuan, 2002 .

Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates

C. K. Inoki, H. Morkoç, S. Doğan, 2005 .

Growth of Gan on Porous Sic Substrates by Plasma-Assisted Molecular Beam Epitaxy

C. D. Lee, C. K. Inoki, T. Kuan, 2002 .

Growth of GaN on porous SiC and GaN substrates

C. D. Lee, C. K. Inoki, I. Adesida, 2003 .

Combined MOCVD and MBE growth of GaN on porous SiC

C. K. Inoki, D. Koleske, T. Kuan, 2003 .