Yu. P. Yakovlev

发表

InSb quantum dots and quantum rings in a narrow-gap InAsSbP matrix

S. S. Kizhaev, K. D. Moiseev, Maya P. Mikhailova, 2009, OPTO.

High-speed photodiodes for 2.0-4.0 μm spectral range

Maya P. Mikhailova, I. A. Andreev, E. V. Kunitsyna, 2007, International Conference on Photoelectronics and Night Vision Devices.

High-temperature luminescence in light-emitting heterostructures with a high potential barriers based on GaSb

N. D. Stoyanov, Maya P. Mikhailova, Evgenii V. Ivanov, 2015, Other Conferences.

Sensitivity of a receiver using GaInAsSb/AlGaAsSb SAM avalanche photodiode for long-wavelength optical communication systems in the mid-infrared spectral range

Maya P. Mikhailova, I. A. Andreev, E. V. Kunitsyna, 2009, Optics + Optoelectronics.

Lasers And Avalanche Photodiodes For IR Fiber Optics In The 2-2,5 µm Spectral Range

Maya P. Mikhailova, Yu. P. Yakovlev, Alexej N. Baranov, 1989, Photonics West - Lasers and Applications in Science and Engineering.

Photovoltaic detector based on type II p-InAs/AlSb/InAsSb/AlSb/p-GaSb heterostructures with a single quantum well for mid-infrared spectral range

Yu. P. Yakovlev, E. Hulicius, A. Hospodková, 2008, Photonics Prague.

Type II heterostructures with InSb quantum dots inserted into p-n InAs(Sb,P) junction

S. S. Kizhaev, K. D. Moiseev, Maya P. Mikhailova, 2010, OPTO.

Discovery of III–V Semiconductors: Physical Properties and Application

Maya P. Mikhailova, K. D. Moiseev, Yu. P. Yakovlev, 2019, Semiconductors.

Liquid phase epitaxy of Ga1−xAlxSb1−yAsy/GaSb and the effect of strain on phase equilibria

Yu. P. Yakovlev, Alexej N. Baranov, S. G. Konnikov, 1984 .

Specific features of the epitaxial growth of narrow-gap InSb quantum dots on an InAs substrate

K. D. Moiseev, Ya. A. Parkhomenko, E. V. Gushchina, 2009 .

Vertical transport in a GaInAsSb∕p-InAs broken-gap type II heterojunction

K. D. Moiseev, Yu. P. Yakovlev, M. P. Mikhailova, 2007 .

Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions

K. D. Moiseev, Maya P. Mikhailova, Yu. P. Yakovlev, 2004 .

A 2.78-μm laser diode based on hybrid AlGaAsSb/InAs/CdMgSe double heterostructure grown by molecular-beam epitaxy

K. D. Moiseev, Maya P. Mikhailova, Yu. P. Yakovlev, 2003 .

Avalanche multiplication and ionization coefficients of GalnAsSb

I. A. Andreev, Maya P. Mikhailova, Yu. P. Yakovlev, 1991 .

Type II broken-gap InAs/GaIn0.17As0.22Sb heterostructures with abrupt planar interface

K. D. Moiseev, Yu. P. Yakovlev, N. N. Faleev, 2000 .

EXPERIMENTAL OBSERVATION OF WHISPERING GALLERY MODES IN SECTOR DISK LASERS

Yu. P. Yakovlev, A. M. Monakhov, Roland Teissier, 2009 .

High-efficiency LEDs of 1.6–2.4 µm spectral range for medical diagnostics and environment monitoring

N. D. Stoyanov, Yu. P. Yakovlev, A. P. Astakhova, 2003 .

Type II GaSb based photodiodes operating in spectral range 1.5-4.8 /spl mu/m at room temperature

N. D. Stoyanov, I. A. Andreev, K. D. Moiseev, 2002 .

Recombination nearby N-n GaSb/GaInAsSb Staggered Lineup Heterojunction

Yu. P. Yakovlev, Albert N. Imenkov, Andrei A. Popov, 1995 .

Sulfide passivation of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures

I. A. Andreev, E. V. Kunitsyna, Maya P. Mikhailova, 1997 .

Room-temperature electroluminescence of AlSb/InAsSb single quantum wells grown by metal organic vapor phase epitaxy

K. D. Moiseev, Maya P. Mikhailova, Evgenii V. Ivanov, 2006 .

2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers

Yu. P. Yakovlev, Albert N. Imenkov, Alexei N. Baranov, 1994 .

Superlinear electroluminescence in GaSb-based heterostructures with high potential barriers

N. D. Stoyanov, Yu. P. Yakovlev, K. V. Kalinina, 2013 .

Interface electroluminescence of confined carriers in type II broken-gap p-GaInAsSbp-InAs single heterojunction

K. D. Moiseev, Yu. P. Yakovlev, Georgy G. Zegrya, 1996 .

Behavior of impurities of p-type GaInSbAs solid solutions

Yu. P. Yakovlev, T. I. Voronina, B. E. Dzhurtanov, 1991 .

Two‐dimensional semimetal channel in a type II broken‐gap GaInAsSb/InAs single heterojunction

K. D. Moiseev, Yu. P. Yakovlev, V. I. Nizhankovskii, 2003 .

Light-emitting diodes based on GaSb alloys for the 1.6–4.4 μm mid-infrared spectral range

Yu. P. Yakovlev, B. E. Zhurtanov, A. N. Imenkov, 2005 .

Transition from the type-II broken-gap heterojunction to the staggered one in the GaInAsSb/InAs(GaSb) system

K. D. Moiseev, Yu. P. Yakovlev, M. P. Mikhailova, 2007 .

Electroluminescence and photoelectric properties of type II broken-gap n-In(Ga)As(Sb)/N-GaSb heterostructures

N. D. Stoyanov, K. D. Moiseev, Yu. P. Yakovlev, 1999 .

Powerful mid-infrared light emitting diodes for pollution monitoring

Claude Alibert, Yu. P. Yakovlev, Andrei A. Popov, 1997 .

Magnetotransport in a semimetal channel in p-Ga1−xInxAsySb1−y/p-InAs heterostructures with various compositions of the solid solution

K. D. Moiseev, Yu. P. Yakovlev, M. P. Mikhailova, 2000 .