I. Asano

Practical studies on GCL for a sealing material of ponds, 1: The fundamental experiments on the water-proof properties of geosynthetic clay liner using a ultra high pressure mold

N. Miura, I. Natsuka, Y. Mohri, 1993 .

Low temperature metal-based cell integration technology for gigabit and embedded DRAMs

Y. Tadaki, N. Ohashi, T. Umezawa, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Mechanism of stress-induced migration in VLSI aluminum metallization

Kenji Hinode, I. Asano, Y. Homma, 1988, 1988. Proceedings., Fifth International IEEE VLSI Multilevel Interconnection Conference.

Void formation mechanism in VLSI aluminum metallization

Kenji Hinode, I. Asano, Y. Homma, 1989 .

Niobia-stabilized tantalum pentoxide (NST) - novel high-k dielectrics for low-temperature process of MIM capacitors

I. Asano, M. Hiratani, S. Kimura, 2002, Digest. International Electron Devices Meeting,.

A 29 ns 64 Mb DRAM with hierarchical array architecture

T. Takahashi, M. Morino, K. Komatsuzaki, 1995, Proceedings ISSCC '95 - International Solid-State Circuits Conference.