Michael J. Manfra

发表

1 Support through IARPA-MQCO, LPS-MPO-CMTC, Army Research Office, and the Danish National Research Foundation is acknowledged

Saeed Fallahi, Frederico Rodrigues Martins, Charles M. Marcus, 2015 .

Induced superconductivity in high-mobility two-dimensional electron gas in gallium arsenide heterostructures

Aleksandr Kazakov, Ken W. West, Michael J. Manfra, 2015, Nature Communications.

Small‐signal admittance and switching measurements of the resonant‐tunneling diode

J. P. Mattia, Elliott R. Brown, Michael J. Manfra, 1993 .

Impact of Si doping on radio frequency dispersion in unpassivated GaN/AlGaN/GaN high-electron-mobility transistors grown by plasma-assisted molecular-beam epitaxy

Oleg Mitrofanov, Michael J. Manfra, Nils Guenter Weimann, 2003 .

Arrays of III-V semiconductor Geiger-mode avalanche photodiodes

Douglas C. Oakley, Joseph P. Donnelly, George W. Turner, 2003, The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..

Dynamics of trapped charge in GaN/AlGaN/GaN high electron mobility transistors grown by plasma-assisted molecular beam epitaxy

Oleg Mitrofanov, Michael J. Manfra, 2004 .

Virtual mesa and spoiler midinfrared angled-grating distributed feedback lasers fabricated by ion bombardment

Christopher L. Felix, William W. Bewley, R. E. Bartolo, 2001 .

Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy

Richard J. Molnar, Julia W. P. Hsu, Michael J. Manfra, 2001 .

Repeatable low-temperature negative-differential resistance from Al0.18Ga0.82N/GaN resonant tunneling diodes grown by molecular-beam epitaxy on free-standing GaN substrates

Liang Tang, Michael J. Manfra, Oana Malis, 2012 .

Surface morphology evolution of m-plane (11¯00) GaN during molecular beam epitaxy growth: Impact of Ga/N ratio, miscut direction, and growth temperature

Liang Tang, Michael J. Manfra, Oana Malis, 2013 .

High CW power (>200 mW/facet) at 3.4 /spl mu/m from InAsSb/InAlAsSb strained quantum well diode lasers

George W. Turner, Michael J. Manfra, M. Manfra, 1996 .

Improvement of near-infrared absorption linewidth in AlGaN/GaN superlattices by optimization of delta-doping location

Liang Tang, Dmitri N. Zakharov, M. Cervantes, 2012 .

High-reflectivity ultraviolet AlGaN∕AlGaN distributed Bragg reflectors

Theo Siegrist, Richard J. Molnar, Oleg Mitrofanov, 2006 .

Measurements of optical‐heterodyne conversion in low‐temperature‐grown GaAs

C. L. Dennis, Elliott R. Brown, Michael J. Manfra, 1993 .

Materials Research Society Fall Meeting, Boston, 2002

Mq Baines, David Cherns, Jwp Hsu, 2002 .

Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors

Oleg Mitrofanov, Michael J. Manfra, M. Manfra, 2004 .

Collective non-perturbative coupling of 2D electrons with high-quality-factor terahertz cavity photons

John L. Reno, Junichiro Kono, Michael J. Manfra, 2016, Nature Physics.

Milliwatt output levels and superquadratic bias dependence in a low‐temperature‐grown GaAs photomixer

J. P. Mattia, C. L. Dennis, Kirby B. Nichols, 1994 .

Comparative study of intersubband absorption in AlGaN/GaN and AlInN/GaN superlattices: Impact of material inhomogeneities

Liang Tang, Alexander Valavanis, Paul Harrison, 2013 .

175 K continuous wave operation of InAsSb/InAlAsSb quantum‐well diode lasers emitting at 3.5 μm

George W. Turner, Michael K. Connors, Michael J. Manfra, 1996 .

CO2-Laser Heterodyne Detection with GaAs/AlGaAs MQW Structures

Kirby B. Nichols, Elliott R. Brown, Michael J. Manfra, 1994 .

High-fidelity entangling gate for double-quantum-dot spin qubits

Saeed Fallahi, Amir Yacoby, Michael J. Manfra, 2016, 1608.04258.

A quasioptical resonant-tunneling-diode oscillator operating above 200 GHz

C. D. Parker, Elliott R. Brown, Michael J. Manfra, 1993 .

Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes

Richard J. Molnar, Rafael Nathan Kleiman, Julia W. P. Hsu, 2001 .

Ultralow-threshold (50 A/cm2) strained single-quantum-well GaInAsSb/AlGaAsSb lasers emitting at 2.05 μm

George W. Turner, Michael J. Manfra, M. Manfra, 1998 .

Temperature-dependence of negative differential resistance in GaN/AlGaN resonant tunneling structures

Liang Tang, Michael J. Manfra, Oana Malis, 2013 .

Effects of forming gas anneal on ultrathin InGaAs nanowire metal-oxide-semiconductor field-effect transistors

Mengwei Si, Peide D. Ye, Roy G. Gordon, 2013 .

High-frequency resonant-tunneling oscillators

T. C. McGill, C. D. Parker, Elliott R. Brown, 1991 .

Near-Infrared Absorption in Lattice-Matched AlInN/GaN and Strained AlGaN/GaN Heterostructures Grown by MBE on Low-Defect GaN Substrates

Liang Tang, Tanja Paskova, M. Cervantes, 2012, Journal of Electronic Materials.

Fast spin exchange between two distant quantum dots

Charles M. Marcus, Saeed Fallahi, Stephen D. Bartlett, 2018, 1808.09736.

Heterojunction thermophotovoltaic devices with high voltage factor

Robin Huang, Leo J. Missaggia, George W. Turner, 2007 .

5 mW parallel-connected resonant-tunnelling diode oscillator

Elliott R. Brown, K. D. Stephan, Michael J. Manfra, 1992 .

High-speed resonant-tunneling diodes made from the In0.53Ga0.47As/AlAs material system

Stella W. Pang, C. D. Parker, Elliott R. Brown, 1990 .

Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates

James S. Speck, Richard J. Molnar, Julia W. P. Hsu, 2002 .

Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors

Oleg Mitrofanov, Michael J. Manfra, M. Manfra, 2003 .

Geiger-mode avalanche photodiodes at 2μm wavelength

Robert J. Bailey, Joseph P. Donnelly, George W. Turner, 2007 .

Limitations to beam quality of mid-infrared angled-grating distributed-feedback lasers

William W. Bewley, R. E. Bartolo, Jerry R. Meyer, 2001 .

Thermal conductivity of AlAs0.07Sb0.93 and Al0.9Ga0.1As0.07Sb0.93 alloys and (AlAs)1/(AlSb)11 digital-alloy superlattices

Jerry R. Meyer, Hao Lee, Ramon U. Martinelli, 2002 .

MBE growth of high-power quantum-well diode lasers emitting at 3.5 μm

George W. Turner, Michael K. Connors, Michael J. Manfra, 1997 .

Homogeneous AlGaN/GaN superlattices grown on free-standing (11¯00) GaN substrates by plasma-assisted molecular beam epitaxy

Dmitri N. Zakharov, Michael J. Manfra, Oana Malis, 2013 .

High mobility AlGaN/GaN heterostructures grown by plasma-assisted molecular beam epitaxy on semi-insulating GaN templates prepared by hydride vapor phase epitaxy

H. L. Stormer, Richard J. Molnar, Julia W. P. Hsu, 2002 .

Quantum well intersubband heterodyne infrared detection up to 82 GHz

Kirby B. Nichols, Elliott R. Brown, Michael J. Manfra, 1995 .

New MBE (molecular beam epitaxy) buffer used to eliminate backgating in gaas mesfets

Leonard J. Mahoney, Michael J. Manfra, Arthur R. Calawa, 1988 .

Coherent detection with a GaAs/AlGaAs multiple quantum well structure

Elliott R. Brown, Michael J. Manfra, K. A. McIntosh, 1993 .

Reduction of sidegating in GaAs analog and digital circuits using a new buffer layer

Leonard J. Mahoney, Michael J. Manfra, Arthur R. Calawa, 1989 .

Symmetric Operation of the Resonant Exchange Qubit

Charles M. Marcus, Saeed Fallahi, Filip K. Malinowski, 2017, 1704.01298.