Guofu Niu

发表

A channel resistance derivative method for effective channel length extraction in LDD MOSFETs

John D. Cressler, Seshadri Subbanna, Guofu Niu, 2000 .

Noise modeling and SiGe profile design tradeoffs for RF applications [HBTs]

Alvin J. Joseph, John D. Cressler, Lawrence E. Larson, 2000 .

A comparison of npn and pnp profile design tradeoffs for complementary SiGe HBT Technology

John D. Cressler, Gang Zhang, Angelo Pinto, 2000 .

Noise in SiGe HBT RF Technology: Physics, Modeling, and Circuit Implications

Guofu Niu, G. Niu, 2005, Proceedings of the IEEE.

Miniaturized Data Acquisition System for Extreme Temperature Environments

R. Berger, R. Garbos, A. Mantooth, 2008, 2008 IEEE Aerospace Conference.

A General 4-Port Solution for 110 GHz On-Wafer Transistor Measurements With or Without Impedance Standard Substrate (ISS) Calibration

Qingqing Liang, S. Taylor, Xudong Wang, 2007, IEEE Transactions on Electron Devices.

RF CMOS linearity analysis using harmonic balance device simulation

S.S. Taylor, Guofu Niu, D. Kopalle, 2006, Digest of Papers. 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

A novel channel resistance ratio method for effective channel length and series resistance extraction in MOSFETs

John D. Cressler, Guofu Niu, S. J. Mathew, 2000 .

An SEU hardening approach for high-speed SiGe HBT digital logic

John D. Cressler, Barry K. Gilbert, Paul W. Marshall, 2003 .

An Improved On-chip 4-Port Parasitics De-embedding Method with Application to RF CMOS

Qingqing Liang, Ying Li, Xudong Wang, 2007, 2007 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

Application of RHBD Techniques to SEU Hardening of Third-Generation SiGe HBT Logic Circuits

J.D. Cressler, B.A. Randall, B.K. Gilbert, 2006, IEEE Transactions on Nuclear Science.

Microscopic RF noise simulation and noise source modeling in 50 nm gate length CMOS

S.S. Taylor, Yan Cui, Guofu Niu, 2004, Digest of Papers. 2004 Topical Meeting onSilicon Monolithic Integrated Circuits in RF Systems, 2004..

Design and fabrication of planar guard ring termination for high-voltage SiC diodes

John D. Cressler, David C. Sheridan, Charles D. Ellis, 2000 .

Scaling and technological limitations of 1/f noise and oscillator phase noise in SiGe HBTs

Jin Tang, Zhiming Feng, A.J. Joseph, 2005, IEEE transactions on microwave theory and techniques.

Temperature Scalable Modeling of SiGe HBT DC Currents Down to 43K

John D. Cressler, Zhiming Feng, Guofu Niu, 2006 .

Dual-band quad-core transformer coupled VCO with phase noise optimization

Feng Zhao, Fa Foster Dai, Wei Zhou, 2015, 2015 IEEE Bipolar/BiCMOS Circuits and Technology Meeting - BCTM.

On the optimization and design of SiGe HBT cascode low-noise amplifiers

John D. Cressler, Qingqing Liang, David L. Harame, 2005 .

Discussions and extension of van Vliet’s noise model for high speed bipolar transistors

Guofu Niu, Kejun Xia, 2009 .

Singular-Value-Decomposition Based Four Port De-embedding and Single-step Error Calibration for On-chip Measurement

S.S. Taylor, Guofu Niu, Xiaoyun Wei, 2007, 2007 IEEE/MTT-S International Microwave Symposium.

SEU Error Signature Analysis of Gbit/s SiGe Logic Circuits Using a Pulsed Laser Microprobe

J.D. Cressler, R.A. Reed, C.J. Marshall, 2006, IEEE Transactions on Nuclear Science.

Wide temperature range SiGe HBT noise parameter modeling and LNA design for extreme environment Electronics

John D. Cressler, Rongchen Ma, Lan Luo, 2015 .

Transistor noise in SiGe HBT RF technology

Alvin J. Joseph, John D. Cressler, David L. Harame, 2001 .

Operating SOI CMOS technology in extreme environments

Ying Li, Guofu Niu, J.D. Cressler, 2003, 2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers..

A New Device Phenomenon in Cryogenically-Operated SiGe HBTs

Qingqing Liang, R. Krithivasan, Jiahui Yuan, 2006, 2006 International Electron Devices Meeting.

Proton-induced SEU in SiGe digital logic at cryogenic temperatures

John D. Cressler, Michael L. Alles, Paul W. Marshall, 2007 .

Intermodulation linearity characteristics of CMOS transistors in a 0.13 /spl mu/m process

Jun Pan, S.S. Taylor, Guofu Niu, 2005, 2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers.

Modeling of temperature dependent IC-VBE characteristics of SiGe HBTs from 43–400K

Ziyan Xu, Guofu Niu, J. Cressler, 2008, 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

Wide temperature range compact modeling of SiGe HBTs for space applications

John D. Cressler, H. Alan Mantooth, Peng Cheng, 2011, 2011 IEEE 43rd Southeastern Symposium on System Theory.

Reconciling 3-D Mixed-Mode Simulations and Measured Single-Event Transients in SiGe HBTs

R A Reed, Guofu Niu, A Raman, 2010, IEEE Transactions on Nuclear Science.

Proton radiation effects in 0.35 /spl mu/m partially depleted SOI MOSFETs fabricated on UNIBOND

John D. Cressler, Ying Li, Paul W. Marshall, 2002 .

SiGe BiCMOS Precision Voltage References for Extreme Temperature Range Electronics

C. Ulaganathan, Suheng Chen, R. Krithivasan, 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.

Comparison of current gain and low-frequency noise degradation by hot electrons and hot holes under reverse EB stress in UHV/CVD SiGe HBTs

John D. Cressler, David C. Ahlgren, U. Gogineni, 1998, Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).

A Physics-Based Trap-Assisted Tunneling Current Model for Cryogenic Temperature Compact Modeling of SiGe HBTs

John D. Cressler, Ziyan Xu, Guofu Niu, 2010 .

Compact modeling of collector base junction space charge region transit time effect on noise in SiGe HBTs

Ramana M. Malladi, Ziyan Xu, Guofu Niu, 2010, 2010 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF).

Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's

John D. Cressler, David C. Ahlgren, U. Gogineni, 1999 .

Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 /spl mu/m SiGe BiCMOS technology

John D. Cressler, Gaurab Banerjee, M. J. Palmer, 1999 .

An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs

M. Turowski, A. Raman, G. Vizkelethy, 2007, IEEE Transactions on Nuclear Science.

RF linearity characteristics of SiGe HBTs

John D. Cressler, Qingqing Liang, David L. Harame, 2001 .

3-D Simulation of Heavy-Ion Induced Charge Collection in SiGe HBTs on SOI

John D. Cressler, Paul W. Marshall, Robert A. Reed, 2004 .

Quantifying neutral base recombination and the effects of collector-base junction traps in UHV/CVD SiGe HBTs

Alvin J. Joseph, John D. Cressler, Guofu Niu, 1998 .

Impact of high frequency correlated noise on SiGe HBT low noise amplifier design

Wanrong Zhang, Pei Shen, Ziyan Xu, 2012, 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

Explicit formulation of a series resistance correction procedure for MOSFET parameter extraction and its accuracy analysis

John D. Cressler, Guofu Niu, S. J. Mathew, 1998 .

3-D simulation of heavy-ion induced charge collection in SiGe HBTs

Alvin J. Joseph, John D. Cressler, Paul W. Marshall, 2003 .

Noise parameter optimization of UHV/CVD SiGe HBT's for RF and microwave applications

John D. Cressler, W. E. Ansley, Guofu Niu, 1999 .

Substrate Engineering Concepts to Mitigate Charge Collection in Deep Trench Isolation Technologies

G. Espinel, G. Vizkelethy, J.P. Comeau, 2006, IEEE Transactions on Nuclear Science.

The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs

Alvin J. Joseph, John D. Cressler, David L. Harame, 2002 .

Electrical probing of surface and bulk traps in proton-irradiated gate-assisted lateral PNP transistors

John D. Cressler, Gaurab Banerjee, Guofu Niu, 1998 .

An Investigation of Negative Differential Resistance and Novel Collector–Current Kink Effects in SiGe HBTs Operating at Cryogenic Temperatures

Qingqing Liang, Jiahui Yuan, Guofu Niu, 2007, IEEE Transactions on Electron Devices.

Impact of profile design and scaling on large signal performance of SiGe HBTs

Jun Pan, Guofu Niu, G. Niu, 2004, Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.

Characterization and profile optimization of SiGe pFETs on silicon-on-sapphire

John D. Cressler, Guofu Niu, S. J. Mathew, 1999 .

The effects of proton irradiation on SiGe:C HBTs

John D. Cressler, Paul W. Marshall, Cheryl J. Marshall, 2001 .

2-D analysis of device parasitics for 800/1000 GHz f/sub T//f/sub max/ SiGe HBT

Guofu Niu, Yun Shi, 2005, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..

Single event upset test results on a prescaler fabricated in IBM's 5HP silicon germanium heterojunction bipolar transistors BiCMOS technology

John D. Cressler, K. A. LaBel, Paul W. Marshall, 2001, 2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588).

An investigation of proton energy effects in SiGe HBT technology

John D. Cressler, Paul W. Marshall, Robert A. Reed, 2002 .

A high-injection transit-time model for heterojunction barrier effects in SiGe HBTs

John D. Cressler, Qingqing Liang, David L. Harame, 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.

Modeling and characterization of SiGe HBT low-frequency noise figures-of-merit for RFIC applications

Alvin J. Joseph, John D. Cressler, David L. Harame, 2002 .

Comparison and optimization of edge termination techniques for SiC power devices

John D. Cressler, Guofu Niu, J. B. Dufrene, 2001, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216).

Transistor noise in SiGe HBT RF technology

Alvin J. Joseph, Mattia Borgarino, Robert Plana, 2000, Proceedings of the 2000 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.00CH37124).

Experimental extraction and model evaluation of base and collector current RF noise in SiGe HBTs

Kejun Xia, Guofu Niu, D. Sheridan, 2004, 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers.

A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs

John D. Cressler, Qingqing Liang, David L. Harame, 2002 .

A unified approach to RF and microwave noise parameter modeling in bipolar transistors

John D. Cressler, David L. Harame, W. E. Ansley, 2001 .

Hot electron and hot hole degradation of UHV/CVD SiGe HBT's

John D. Cressler, David L. Harame, U. Gogineni, 2000 .

Proton response of low-frequency noise in 0.20 μm 90 GHz fT UHV/CVD SiGe HBTs

Alvin J. Joseph, John D. Cressler, Paul W. Marshall, 2003 .

3-D Simulation of SEU Hardening of SiGe HBTs Using Shared Dummy Collector

Guofu Niu, R. Reed, P. Marshall, 2007, IEEE Transactions on Nuclear Science.

Charge Collection and SEU in SiGe HBT Current Mode Logic Operating at Cryogenic Temperatures

Robert Reed, Ziyan Xu, Guofu Niu, 2010, IEEE Transactions on Nuclear Science.

Design of single and multiple zone junction termination extension structures for SiC power devices

John D. Cressler, Guofu Niu, David C. Sheridan, 2001 .

The operation of 0.35 μm partially depleted SOI CMOS technology in extreme environments

John D. Cressler, Ying Li, S. T. Liu, 2003 .

A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs

Yuan Lu, John D. Cressler, Qingqing Liang, 2003 .

A Mechanism Versus SEU Impact Analysis of Collector Charge Collection in SiGe HBT Current Mode Logic

Guofu Niu, J.D. Cressler, R.A. Reed, 2009, IEEE Transactions on Nuclear Science.

Compact Modeling of the Temperature Dependence of Parasitic Resistances in SiGe HBTs Down to 30 K

Guofu Niu, J. Cressler, G. Niu, 2009, IEEE Transactions on Electron Devices.

Low-Frequency Noise

Guofu Niu, G. Niu, 2005 .

Guofu Niu, Xiaojia Jia, 2014, IEEE Transactions on Electron Devices.

Gate controlled vertical-lateral NPN bipolar transistor in 90nm RF CMOS process

Zhiming Feng, Yan Cui, G.A. Rezvani, 2008, 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting.

Measurement and Modeling of Drain Current Thermal Noise to Shot Noise Ratio in 90nm CMOS

S.S. Taylor, Yan Cui, Guofu Niu, 2008, 2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems.

Proton-induced SEU in SiGe digital logic at cryogenic temperatures

M.A. Carts, Guofu Niu, R. Reed, 2007, 2007 International Semiconductor Device Research Symposium.

SiGe Profile Optimization for Improved Cryogenic Operation at High Injection

L. Najafizadeh, Yan Cui, Guofu Niu, 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.

Noise-gain tradeoff in RF SiGe HBTs

D. Harame, Guofu Niu, Shiming Zhang, 2001, 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496).

A New Approach to Implementing High-Frequency Correlated Noise for Bipolar Transistor Compact Modeling

Kejun Xia, Ziyan Xu, Guofu Niu, 2012, IEEE Transactions on Electron Devices.

Intermodulation characteristics of UHV/CVD SiGe HBTs

John D. Cressler, W. E. Ansley, Guofu Niu, 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024).

Impact of Scaling on the Inverse-Mode Operation of SiGe HBTs

Peng Cheng, M. Bellini, Jiahui Yuan, 2007, IEEE Transactions on Electron Devices.