C. Salm

Strategies to cope with plasma charging damage in design and layout phases

A. Scarpa, J. Ackaert, Z. Wang, 2005, 2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005..

Modeling of RTS noise in MOSFETs under steady-state and large-signal excitation

H. Wallinga, E. Hoekstra, E.A.M. Klumperink, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Comparison of C-V measurement methods for RF-MEMS capacitive switches

Jiahui Wang, J. Schmitz, C. Salm, 2013, 2013 IEEE International Conference on Microelectronic Test Structures (ICMTS).

Effect of thermal gradients on the electromigration life-time in power electronics

J. Bisschop, C. Salm, F.G. Kuper, 2004, 2004 IEEE International Reliability Physics Symposium. Proceedings.

Gate-workfunction engineering using poly-(Si,Ge) for high-performance 0.18 /spl mu/m CMOS technology

C. Salm, Y.V. Ponomarev, J. Schmitz, 1997, International Electron Devices Meeting. IEDM Technical Digest.

A Radiation Imaging Detector Made by Postprocessing a Standard CMOS Chip

J. Melai, C. Salm, J. Schmitz, 2008, IEEE Electron Device Letters.

The Charge Plasma P-N Diode

C. Salm, J. Schmitz, B. Rajasekharan, 2008, IEEE Electron Device Letters.

Fast thermal cycling-enhanced electromigration in power metallization

J. Bisschop, C. Salm, H.V. Nguyen, 2004, IEEE Transactions on Device and Materials Reliability.

Stress-induced leakage current in p/sup +/ poly MOS capacitors with poly-Si and poly-Si/sub 0.7/Ge/sub 0.3/ gate material

J. Holleman, C. Salm, P.H. Woerlee, 1999, IEEE Electron Device Letters.

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

J. Ackaert, E. De Backer, C. Salm, 2002, 7th International Symposium on Plasma- and Process-Induced Damage.

Separation of random telegraph signals from 1/f noise in MOSFETs under constant and switched bias conditions

H. Wallinga, C. Salm, L. Vandamme, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

J. Ackaert, E. De Backer, C. Salm, 2002, Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614).

On the degradation of field-plate assisted RESURF power devices

B. K. Boksteen, A. Heringa, C. Salm, 2012, 2012 International Electron Devices Meeting.