Kazunori Furusawa

发表

New Phenomena in MNOS Retention Characteristics and Their Application to Memory Device Design for Megabit EEPROM's

Takaaki Hagiwara, Sin-ichi Minami, Yoshiaki Kamigaki, 1988 .

Yield and reliability of MNOS EEPROM products

Ken Uchida, Kazunori Furusawa, Takeshi Furuno, 1989 .

Electronic circuit device used in particular in a dead electrically programmable memory

Kazunori Furusawa, Minoru Fukuda, Shigeru Yamatani, 1982 .

Multimedia card and process for their manufacture

Kazunori Furusawa, Satoshi Hatakeyama, Haruji Ishihara, 2001 .

A 130-nm CMOS 95-mm2 1-Gb Multilevel AG-AND-Type Flash Memory with 10-MB/s Programming Throughput

Takashi Kobayashi, Kazunori Furusawa, Keiichi Yoshida, 2006, IEICE Trans. Electron..

A 126 mm2 4-Gb Multilevel AG-AND Flash Memory with Inversion-Layer-Bit-Line Technology

Masahiro Shimizu, Takashi Kobayashi, Kazunori Furusawa, 2007, IEICE Trans. Electron..

64 kbit CMOS EEPROM HN58C65

Kazunori Furusawa, Y. Kamigaki, Takaaki Hagiwara, 1986 .

A highly reliable 256‐kb MNOS EEPROM: Memory cell design technology

Takaaki Hagiwara, Yoshiaki Kamigaki, Ken Uchida, 1990 .

A 3 Volt 1 Mbit Full-Featured EEPROM Using a Highly-Reliable MONOS Device Technology (Special Section on High Speed and High Density Multi Functional LSI Memories)

Kazunori Furusawa, Masaaki Terasawa, Yoshiaki Kamigaki, 1994 .

Improvement of Written-State Retentivity by Scaling Down MNOS Memory Devices : Silicon Devices and Process Technologies( Solid State Devices and Materials 1)

Kazunori Furusawa, Yoshiaki Kamigaki, Takaaki Hagiwara, 1988 .