Eui Bok Lee

A design of Novel IGBT with Oblique Trench Gate(Session 3A : Emerging Device Technology 2)

Byeong Kwon Ju, Man Young Sung, Yong Tae Kim, 2010, SDM 2010.

Large resistive-switching phenomena observed in Ag/Si3N4/Al memory cells

Tae Geun Kim, Eui Bok Lee, H. Kim, 2010 .

Stable Bipolar Resistive Switching Characteristics and Resistive Switching Mechanisms Observed in Aluminum Nitride-based ReRAM Devices

Tae Geun Kim, Eui Bok Lee, H. Kim, 2011, IEEE Transactions on Electron Devices.

A New Class of Charge-Trap Flash Memory With Resistive Switching Mechanisms

Tae Geun Kim, Eui Bok Lee, H. Kim, 2010, IEEE Transactions on Electron Devices.