W. Murray Bullis

发表

Semiconductor measurement technology: A FORTRAN program for calculating the electrical parameters of extrinsic silicon

Robert D. Larrabee, W. Robert Thurber, W. Murray Bullis, 1980 .

VLSI science and technology/1982 : proceedings of the First International Symposium on Very Large Scale Integration Science and Technology

Insulation Division, W. Murray Bullis, Conrad J. Dell'Oca, 1982 .

Methods of Measurement for Semiconductor Materials, Process Control, and Devices: Quarterly Report; January 1 to March 31, 1971

W. Murray Bullis, W. Bullis, M. Hollis, 2017 .

The NBS semiconductor technology program and VLSI

R. I. Scace, W. Murray Bullis, 1980 .

SILICON MATERIALS REQUIREMENTS FOR VLSI AND ULSI CIRCUITS AND THE CHARACTERIZATION TOOLS NEEDED TO ASSURE THEY ARE MET

W. Murray Bullis, 1989 .

Methods of Measurement for Semiconductor Materials, Process Control, and Devices: Quarterly Report; April 1 to June 30, 1969

W. Murray Bullis, W. Bullis, 2017 .

Model-based silicon wafer criteria for optimal integrated circuit performance

Howard R. Huff, Syd R. Wilson, S. R. Wilson, 1998 .

Semiconductor Measurement Technology

W. Murray Bullis, W. Bullis, Murray, 1975 .

Electrical Properties of n‐Type Silicon Doped with Gold

W. Murray Bullis, W. Bullis, F. J. Strieter, 1968 .

Measurement of Silicon Particles by Laser Surface Scanning and Angle‐Resolved Light Scattering

Howard R. Huff, Benjamin Y. H. Liu, Bradley W. Scheer, 1997 .

Resistivity and Carrier Lifetime in Gold-Doped Silicon

David C. Lewis, W. Robert Thurber, W. Murray Bullis, 1973 .