T. Eimori
发表
H. Miyoshi,
T. Iwamatsu,
M. Inuishi,
1996,
International Electron Devices Meeting. Technical Digest.
Compact modeling of a flash memory cell including substrate-bias-dependent hot-electron gate current
Y. Ohji,
S. Shimizu,
T. Ogura,
2004,
IEEE Transactions on Electron Devices.
K. Eikyu,
T. Okagaki,
M. Tanizawa,
2006,
2006 International Conference on Simulation of Semiconductor Processes and Devices.
K. Eriguchi,
I. Miyanaga,
A. Kajiya,
2002,
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
Y. Ohji,
S. Kamiyama,
Y. Nara,
2008,
2008 Symposium on VLSI Technology.
Y. Ohji,
S. Kamiyama,
Y. Nara,
2009,
IEEE Transactions on Electron Devices.
K. Eriguchi,
T. Kishimoto,
T. Inbe,
2002,
2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).
Y. Ohji,
J. Yugami,
Y. Tsukamoto,
2005,
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
Y. Ohji,
Y. Nara,
T. Watanabe,
2008,
IEEE Transactions on Electron Devices.
Y. Ohji,
M. Inuishi,
T. Kuroi,
2005
.
T. Kuroi,
T. Eimori,
K. Horita,
2001,
Extended Abstracts of the Second International Workshop on Junction Technology. IWJT. (IEEE Cat.No.01EX541C).
David R. Allee,
Roger Fabian W. Pease,
S. W. J. Kuan,
1989
.
Roger Fabian W. Pease,
T. Eimori,
Benjamin W. Chui,
1991
.