Plamen Paskov

发表

Photoluminescence of Mg-doped m-plane GaN grown by MOCVD on bulk GaN substrates

David Lindgren, Hadis Morkoç, Lars Samuelson, 2011, OPTO.

Lithium triborate parametric oscillator with ultrashort pulses

L. I. Pavlov, Plamen Paskov, Nadejda I. Kaymakanova, 1996, Other Conferences.

Nonlinear optical diagnostics of the properties of IV-VI semiconductor epitaxial structures

L. I. Pavlov, Plamen Paskov, 1992, Other Conferences.

Optical properties of InGaN/GaN and AlGaN/GaN multiple quantum well structures

Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, 2003, Saratov Fall Meeting.

Photoluminescence study of near-surface GaN/AlN superlattices

Satoshi Kamiyama, Isamu Akasaki, Hiroshi Amano, 2008, SPIE OPTO.

Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics

Edward A. Preble, Mark Johnson, Minseo Park, 2009 .

Residual strain in HVPE GaN free-standing and re-grown homoepitaxial layers

Mathias Schubert, Tanja Paskova, Plamen Paskov, 2003 .

Recombination of free and bound excitons in GaN

T. V. Shubina, Plamen Paskov, Bo Monemar, 2008 .

Emission properties of a-plane GaN grown by metal-organic chemical-vapor deposition

Detlef Hommel, Plamen Paskov, Tanya Paskova, 2005 .

Photoluminescence of a ‐plane GaN: comparison between MOCVD and HVPE grown layers

James S. Speck, Shuji Nakamura, Detlef Hommel, 2006 .

Polarized photoluminescence of exciton-polaritons in free-standing GaN

Tanja Paskova, Per-Olof Holtz, Plamen Paskov, 2004 .

Effect of high-temperature annealing on the residual strain and bending of freestanding GaN films grown by hydride vapor phase epitaxy

Mathias Schubert, Detlef Hommel, Filip Tuomisto, 2006 .

Effect of n-type modulation doping on the photoluminescence of GaN/Al0.07Ga0.93N multiple quantum wells

Motoaki Iwaya, Satoshi Kamiyama, Isamu Akasaki, 2002 .

Defect and stress relaxation in HVPE-GaN films using high temperature reactively sputtered AlN buffer

S. Evtimova, Jens Birch, Tanja Paskova, 2001 .

High pressure annealing of HVPE GaN free-standing films: redistribution of defects and stress

Mathias Schubert, Detlef Hommel, Filip Tuomisto, 2004 .

Polarized photoluminescence study of free and bound excitons in free-standing GaN

Tanja Paskova, Per-Olof Holtz, Plamen Paskov, 2004 .

Properties of nonpolar a-plane GaN films grown by HVPE with AlN buffers

B. Arnaudov, Jens Birch, Tanja Paskova, 2005 .