O. Beldarrain

Analysis of the Switching Variability in $\hbox{Ni/HfO}_{2}$-Based RRAM Devices

F. Campabadal, M. B. Gonzalez, J. M. Rafi, 2014, IEEE Transactions on Device and Materials Reliability.

2 MeV electron irradiation effects on the electrical characteristics of MOS capacitors with ALD Al2O3 dielectrics of different thickness

Francesca Campabadal, Kenichiro Takakura, Joan Marc Rafí, 2013, Microelectron. Reliab..

Impact of electrical stress on the electrical characteristics of 2 MeV electron irradiated metal-oxide-silicon capacitors with atomic layer deposited Al2O3, HfO2 and nanolaminated dielectrics

Mireia Bargallo Gonzalez, Francesca Campabadal, Joan Marc Rafí, 2013 .

Investigation of the resistive switching behavior in Ni/HfO2-based RRAM devices

F. Campabadal, M. C. Acero, O. Beldarrain, 2015, 2015 10th Spanish Conference on Electron Devices (CDE).