J.N. Burghartz

发表

Ultra-linear distributed class-AB LDMOS RF power amplifier for base stations

M.P. van der Heijden, H.C. de Graaff, L.C.N. de Vreede, 2001, 2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157).

A 3 V 4 GHz nMOS voltage-controlled oscillator with integrated resonator

J.N. Burghartz, M. Soyuer, K.A. Jenkins, 1996, 1996 IEEE International Solid-State Circuits Conference. Digest of TEchnical Papers, ISSCC.

Perimeter and plug effects in deep sub-micron polysilicon emitter bipolar transistors

J.Y.-C. Sun, J.N. Burghartz, S.R. Mader, 1990, Digest of Technical Papers.1990 Symposium on VLSI Technology.

Size reduction and tuning of integrated folded patch antennas using slots

J.N. Burghartz, M. Bartek, J.H. Correia, 2004, 34th European Microwave Conference, 2004..

A new extraction technique for the series resistances of semiconductor devices based on the intrinsic properties of bias-dependent y-parameters [bipolar transistor examples]

H.C. de Graaff, L.C.N. de Vreede, J.N. Burghartz, 2004, Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.

Through-substrate trenches for RF isolation in wafer-level chip-scale package

J.N. Burghartz, M. Bartek, S.M. Sinaga, 2004, Proceedings of 6th Electronics Packaging Technology Conference (EPTC 2004) (IEEE Cat. No.04EX971).

Multilevel-spiral inductors using VLSI interconnect technology

J.N. Burghartz, M. Soyuer, K.A. Jenkins, 1996, IEEE Electron Device Letters.

Saddle add-on metallisation (SAM) for RF inductor implementation in standard IC interconnects

J.N. Burghartz, B. Rejaei, H. Schellevis, 2002, Digest. International Electron Devices Meeting,.

Low-loss passives for 2nd-harmonic termination control in power amplifiers for mobile applications

M. Spirito, L.C.N. de Vreede, J.N. Burghartz, 2003, 2003 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2003. Digest of Papers..

Spread spectrum communication system performance optimization based on collector epilayer engineering

J.N. Burghartz, J.L. Tauritz, R. Mahmoudi, 2000, 2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397).

A Reference Geometry Based Scaling Approach for Bipolar Transistor Model Mextram

J.N. Burghartz, S. Mijalkovic, Hsien-Chang Wu, 2005, EUROCON 2005 - The International Conference on "Computer as a Tool".

A Referenced Geometry Based Configuration Scalable Mextram Model for Bipolar Transistors

J.N. Burghartz, H.-C. Wu, S. Mijalkovic, 2006, 2006 IEEE International Behavioral Modeling and Simulation Workshop.

Thermal Issues in Micromachined Spiral Inductors for High-Power Applications

J.N. Burghartz, B. Rejaei, Huseyin Sagkol, 2008, IEEE Transactions on Electron Devices.

Ground pattern for improved characteristics of spiral RF transformers on silicon

J.N. Burghartz, K.T. Ng, B. Rejaei, 2001, 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496).

HDR CMOS imagers and their applications

J.N. Burghartz, W. Klingler, H.-G. Graf, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Influence of via-connections on electrical performance of vertically-spaced RF passives

J.N. Burghartz, M. Bartek, S.M. Sinaga, 2005, Proceedings Electronic Components and Technology, 2005. ECTC '05..

Integrated 5.7 GH size antenna for wireless sensor networks

P.M. Mendes, J.N. Burghartz, M. Bartek, 2003, TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664).

High Dynamic Range CMOS Imager Technologies for Biomedical Applications

J.N. Burghartz, C. Scherjon, H.-G. Graf, 2009, IEEE Journal of Solid-State Circuits.

Design and characterization of integrated passive elements on high ohmic silicon

L.C.N. de Vreede, J.N. Burghartz, L.K. Nanver, 2003, IEEE MTT-S International Microwave Symposium Digest, 2003.

Large signal verification of the circuit-oriented smoothie database model for LDMOS devices

L.C.N. de Vreede, J.N. Burghartz, H.F.F. Jos, 2004, 34th European Microwave Conference, 2004..

On the optimum biasing and input out-of-band terminations of linear and power efficient class-AB bipolar RF amplifiers

M. Spirito, M.P. van der Heijden, L.C.N. de Vreede, 2004, Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting.

Novel substrate contact structure for high-Q silicon-integrated spiral inductors

J.N. Burghartz, M. Soyuer, K.A. Jenkins, 1997, International Electron Devices Meeting. IEDM Technical Digest.

Experimental procedure to optimize out-of-band terminations for highly linear and power efficient bipolar class-AB RF amplifiers

M. Spirito, L.E. Larson, M.P. van der Heijden, 2005, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005..

Power amplifier PAE and ruggedness optimization by second harmonic control

M. Spirito, L.C.N. de Vreede, J.N. Burghartz, 2002, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting.

Lithography for the 32-nm Node and Beyond

J.N. Burghartz, M. Irmscher, F. Letzkus, 2006, 2006 Bipolar/BiCMOS Circuits and Technology Meeting.

A high-speed complementary silicon bipolar technology with 12-fJ power-delay product

D.L. Harame, J.N. Burghartz, K.A. Jenkins, 1993, IEEE Electron Device Letters.

On the design of unilateral dual-loop feedback low-noise amplifiers with simultaneous noise, impedance, and IIP3 match

M.P. van der Heijden, L.C.N. de Vreede, J.N. Burghartz, 2004, IEEE Journal of Solid-State Circuits.

Analysis of generic spiral-coil RF transformers on silicon

J.N. Burghartz, M. Soyuer, K.T. Ng, 2000, 2000 Topical Meetings on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (Cat. No.00EX397).