A. Trampert

Influence of carrier localization on the performance of MBE grown GaInNAs/GaAs QW light emitting diodes and laser diodes

J.-Y. Duboz, A. Hierro, J. M. Ulloa, 2005, SPIE Microtechnologies.

1.55-μm range InAs/InP (100) quantum dot telecom devices

Y. Barbarin, M. K. Smit, R. Nötzel, 2007, SPIE Optics East.

Metal-organic vapour-phase epitaxy of gallium nitride nanostructures for optoelectronic applications

Andreas Waag, A. Trampert, H. Riechert, 2009, Microelectron. J..

Selective area growth of III-nitride nanorods on polar, semi-polar, and non-polar orientations: device applications

A. Trampert, S. Albert, A. Bengoechea-Encabo, 2015, SPIE OPTO.

11. CONCLUSIONS - RECOMMENDATIONS - FUTURE STRATEGIES AND ACTION PLAN

M. Lacroix, J. Daillant, I. Nenner, 2011 .

Enhanced Performances of Quantum Dot Lasers Operating at 1.3 $\mu$ m

L. Martiradonna, L. Fortunato, R. Cingolani, 2008, IEEE Journal of Selected Topics in Quantum Electronics.

X-ray diffraction peak profiles from threading dislocations in GaN epitaxial films

K. H. Ploog, A. Trampert, O. Brandt, 2004, cond-mat/0410510.

Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy

Eric Tournié, A. Trampert, Biswarup Satpati, 2010 .