T. Domon

Non-destructive current measurement for surface mounted power MOSFET on VRM board using magnetic field probing technique

I. Omura, M. Yamaguchi, Yusuke Kawaguchi, 2009, 2009 21st International Symposium on Power Semiconductor Devices & IC's.

380v/1.9A GaN power-HEMT: current collapse phenomena under high applied voltage and demonstration of 27.1 MHz class-E amplifier

I. Omura, W. Saito, M. Yamaguchi, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Demonstration of resonant inverter circuit for electrodeless fluorescent lamps using high voltage GaN-HEMT

I. Omura, W. Saito, M. Yamaguchi, 2008, 2008 IEEE Power Electronics Specialists Conference.

Demonstration of 13.56-MHz class-E amplifier using a high-Voltage GaN power-HEMT

I. Omura, W. Saito, M. Yamaguchi, 2006, IEEE Electron Device Letters.

Gallium Nitride power HEMT for high switching frequency power electronics

I. Omura, W. Saito, T. Domon, 2007, 2007 International Workshop on Physics of Semiconductor Devices.

A Built-in Type Amorphous Torque Sensor for an Induction Motor

T. Kobayashi, T. Domon, M. Sahashi, 1988, IEEE Translation Journal on Magnetics in Japan.

High Voltage and High Switching Frequency Power-Supplies using a GaN-HEMT

I. Omura, W. Saito, T. Domon, 2006, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium.