J. J. Hsieh

发表

High-performance uncooled 1.3-µm AlxGayIn1-x-yAs/InP strained-layer quantum-well lasers for fiber-in-the-loop applications

Wei Lin, Chung-En Zah, Rajaram Bhat, 1994 .

Oxide Deposition By PECVD

Dale E. Ibbotson, J. A. Mucha, J. J. Hsieh, 1989, Other Conferences.

Recent progress on uncooled 1.3-µm lasers for loop applications

Chung-En Zah, Rajaram Bhat, T. P. Lee, 1995 .

Intracavity Loss Modulation Of GalnAsP Lasers

Joseph P. Donnelly, James N. Walpole, S. H. Groves, 1981, Photonics West - Lasers and Applications in Science and Engineering.

High-reliability, high-performance, low-cost coaxial laser module at 1.3 µm for local-loop applications

Chung-En Zah, T. P. Lee, G. Pinelli, 1994 .

Room-Temperature Operation of GaInAsp/Inp Double-Heterostructure Diode Lasers Emitting at 1.1 µm*

Joseph P. Donnelly, J. J. Hsieh, J. Donnelly, 1976, Integrated Optics.

GaInAsP/InP Avalanche Photodiodes*

J. J. Hsieh, C. E. Hurwitz, J. Hsieh, 1978, Integrated and Guided Wave Optics.

Room‐temperature cw operation of buried‐stripe double‐heterostructure GaInAsP/InP diode lasers

J. J. Hsieh, C. C. Shen, J. Hsieh, 1977 .

Self‐sustained pulsations in GaInAsP diode lasers

James N. Walpole, A. G. Foyt, J. J. Hsieh, 1980 .

Thickness and surface morphology of GaAs LPE layers grown by supercooling, step-cooling, equilibrium-cooling, and two-phase solution techniques

J. J. Hsieh, J. Hsieh, 1974 .

High‐efficiency InP homojunction solar cells

George W. Turner, J. J. Hsieh, John C. C. Fan, 1980 .

III-7 integrated GaAs-AlGaAs double-heterostructure lasers

J. J. Hsieh, C. E. Hurwitz, C. M. Wolfe, 1975 .

High-performance 1.3 μm AlGaInAs/InP strained quantum well lasers grown by organometallic chemical vapor deposition

Rajaram Bhat, Nicholas C. Andreadakis, M. A. Koza, 1994 .

1000-Hour Continuous CW Operation Of Double-Heterostructure GaInAsP/Inp Lasers

J. J. Hsieh, T. Lind, T. A. Lind, 1977 .