Toshimasa Hamada

Low-Temperature Gate Insulator for Poly-Si Thin Film Transistors by Combination of Photo-Oxidation and Plasma Enhanced Chemical Vapor Deposition Using Tetraethylorthosilicate and O_2 Gases(Special Issue on Electronic Displays)

Yutaka Ishii, Yukihiko Nakata, Tetsuya Okamoto, 2002 .

Stacked gate insulator of photooxide and PECVD film from SiH4 and N2O for low‐temperature poly‐Si thin‐film transistor

Yutaka Ishii, Yukihiko Nakata, Tetsuya Okamoto, 2003 .