D. L. Scharfetter

发表

Power-frequency characteristics of the trapatt diode mode of high efficiency power generation in Germanium and silicon avalanche diodes

D. L. Scharfetter, D. Scharfetter, 1970, Bell Syst. Tech. J..

Characterization of bipolar devices

D. L. Scharfetter, J. G. Ruch, J. Ruch, 1973 .

Process Oriented IC Design

D. L. Scharfetter, J. G. Ruch, 1977 .

Session 9: Bipolar—Compatible IC technology

D. L. Scharfetter, 1977 .

BSIM: Berkeley short-channel IGFET model for MOS transistors

Bing J. Sheu, D. L. Scharfetter, M.-C. Jeng, 1987 .

The Analysis of Radiation Effects in Semiconductor Junction Devices

J. L. Wirth, C. W. Gwyn, D. L. Scharfetter, 1967 .

Avalanche region of impatt diodes

D. L. Scharfetter, H. K. Gummel, H. Gummel, 1966 .

High-efficiency oscillations in germanium avalanche diodes below the transit-time frequency

D. J. Bartelink, R. L. Johnston, D. L. Scharfetter, 1968 .

High injection in epitaxial transistors

H. C. Poon, D. L. Scharfetter, H. K. Gummel, 1968 .

Dependence of hole velocity upon electric field and hole density for p-type silicon

D. L. Scharfetter, T. E. Seidel, 1967 .

3-D topography simulation of via holes using generalized solid modeling

S. Tazawa, A. Yoshii, D. L. Scharfetter, 1992, 1992 International Technical Digest on Electron Devices Meeting.

Power-impedance-frequency limitations of IMPATT oscillators calculated from a scaling approximation

D. L. Scharfetter, 1971 .

Semi-empirical local NMOS mobility model for 2-D device simulation incorporating screened minority impurity scattering

Robert W. Dutton, S. A. Mujtaba, D. L. Scharfetter, 1994, Proceedings of International Workshop on Numerical Modeling of processes and Devices for Integrated Circuits: NUPAD V.

Device physics of TRAPATT oscillators

D. L. Scharfetter, B. C. DeLoach, D. Scharfetter, 1970 .

High injection in epitaxial transistors

H. C. Poon, D. L. Scharfetter, H. K. Gummel, 1969 .