V. Dhandapani

Integration challenges of new materials and device architectures for IC applications

M. Mendicino, A. Vandooren, Da Zhang, 2004, 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866).

Metal gate MOSFETs with HfO/sub 2/ gate dielectric

P. Abramowitz, P.J. Tobin, E. Luckowski, 2002, 2002 Symposium on VLSI Technology. Digest of Technical Papers (Cat. No.01CH37303).

Metrology Challenges for 45 nm Strained‐Si Devices

R. Powers, Aaron Thean, Victor H. Vartanian, 2005 .

Dual-metal gate CMOS with HfO2 gate dielectric

P. Abramowitz, J. Conner, E. Luckowski, 2002, Digest. International Electron Devices Meeting,.

80 nm poly-Si gate CMOS with HfO/sub 2/ gate dielectric

J. Conner, S. Bagchi, L. Prabhu, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics

Raghaw Rai, Rama I. Hegde, L. Prabhu, 2002 .

Physical and electrical properties of metal gate electrodes on HfO2 gate dielectrics

Bich-Yen Nguyen, Raghaw Rai, M. Zavala, 2003 .

Fermi level pinning at the polySi/metal oxide interface

S. Samavedam, V. Dhandapani, L. Hebert, 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).

Strain-Enhanced CMOS Through Novel Process-Substrate Stress Hybridization of Super-Critically Thick Strained Silicon Directly on Insulator (SC-SSOI)

J. Conner, C. Mazure, S. Murphy, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Embedded SiGe S/D PMOS on thin body SOI substrate with drive current enhancement

M. Mendicino, S. Murphy, S. Venkatesan, 2005, Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005..

Compatibility of Silicon gates with hafnium-based gate dielectrics

Raghaw Rai, Rama I. Hegde, L. Prabhu, 2003 .