Sara Carniello

Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor

Hubert Enichlmair, Rainer Minixhofer, Jong Mun Park, 2007, Microelectron. Reliab..

Interface traps density-of-states as a vital component for hot-carrier degradation modeling

Tibor Grasser, Oliver Triebl, Hajdin Ceric, 2010, Microelectronics and reliability.

Modelling and measurements of thermomechanical stress induced drift on polysilicon resistors with different layout

Luca Fanucci, Paolo Bruschi, Lorenzo Benvenuti, 2019, 2019 14th International Conference on Design & Technology of Integrated Systems In Nanoscale Era (DTIS).

Intrinsic stress analysis of tungsten-lined open TSVs

Siegfried Selberherr, Lado Filipovic, Frederic Roger, 2015, Microelectron. Reliab..