Yoshiaki Kamigaki

发表

Yield and reliability of MNOS EEPROM products

Ken Uchida, Kazunori Furusawa, Takeshi Furuno, 1989 .

A 3 Volt 1 Mbit Full-Featured EEPROM Using a Highly-Reliable MONOS Device Technology (Special Section on High Speed and High Density Multi Functional LSI Memories)

Kazunori Furusawa, Masaaki Terasawa, Yoshiaki Kamigaki, 1994 .

MNOS Nonvolatile Semiconductor Memory Technology: Present and Future

Yoshiaki Kamigaki, Yoshiaki Kamigaki, Shinichi Minami, 2001 .

Thermal oxidation of silicon in various oxygen partial pressures diluted by nitrogen

Yoshiaki Kamigaki, Yokichi Itoh, Y. Kamigaki, 1977 .

High‐resolution transmission electron microscopy study of 1.5 nm ultrathin tunnel oxides of metal‐nitride‐oxide‐silicon nonvolatile memory devices

Yoshiaki Kamigaki, Shinichi Minami, S. Minami, 1988 .

Improvement of Written-State Retentivity by Scaling Down MNOS Memory Devices : Silicon Devices and Process Technologies( Solid State Devices and Materials 1)

Kazunori Furusawa, Yoshiaki Kamigaki, Takaaki Hagiwara, 1988 .

Paramagnetic Defect Spin Centers in Porous SiOCH Film Investigated Using Electron Spin Resonance

Seiichi Kondo, Yoshiaki Kamigaki, Manabu Kato, 2007 .

A new portrayal of electron and hole traps in amorphous silicon nitride

Yoshiaki Kamigaki, Shinichi Minami, S. Minami, 1990 .

Paramagnetic Defect Generation and Microstructure Change in Porous Low-k SiOCH Films with Vacuum Baking

Yoshiaki Kamigaki, Y. Kamigaki, Kenji Tanbara, 2010 .