Tsvetan Ivanov

Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures

Yuan Taur, Hiroshi Iwai, Aaron Thean, 2014, Microelectron. Reliab..

ARTOT: Autonomous real-time object detection and tracking by a moving camera

Plamen P. Angelov, Tsvetan Ivanov, Pouria Sadeghi-Tehran, 2012, 2012 6th IEEE International Conference Intelligent Systems.

Invited) Vertical Nanowire FET Integration and Device Aspects

Nadine Collaert, Aaron Thean, Tsvetan Ivanov, 2016 .

ESD characterization of planar InGaAs devices

X. Zhang, Dimitri Linten, Geert Hellings, 2015, 2015 IEEE International Reliability Physics Symposium.

Beyond-Si materials and devices for more Moore and more than Moore applications

A. Vandooren, Anabela Veloso, Liesbeth Witters, 2016, 2016 International Conference on IC Design and Technology (ICICDT).

Record 47 mV/dec top-down vertical nanowire InGaAs/GaAsSb tunnel FETs

Nadine Collaert, Tsvetan Ivanov, Dennis Lin, 2018, 2018 IEEE Symposium on VLSI Technology.

Engineering the III-V Gate Stack Properties by Optimization of the ALD Process

Aaron Thean, Jacopo Franco, Stefan De Gendt, 2014 .

Impact of the channel thickness on the performance of ultrathin InGaAs channel MOSFET devices

Aaron Thean, Nadine Collaert, Tsvetan Ivanov, 2013, 2013 IEEE International Electron Devices Meeting.