Kuniyuki Kakushima

发表

Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance-voltage characteristics measured at various temperatures

Yuan Taur, Hiroshi Iwai, Aaron Thean, 2014, Microelectron. Reliab..

Si鋳型を用いた微細穴の試作;Si鋳型を用いた微細穴の試作;Micro-hole Fubrication using a Silicon-mold

Hiroyuki Fujita, Makoto Mita, Kuniyuki Kakushima, 2002 .

Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement

Hiroshi Iwai, Nobuyuki Sugii, Chunmeng Dou, 2014, Microelectron. Reliab..

Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2011, Microelectron. Reliab..

Influence of Band Discontinuities at Source-Channel contact in Tunnel FET Performance

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2011 .

Resistive switching behavior of a CeO2 based ReRAM cell incorporated with Si buffer layer

Hiroshi Iwai, Nobuyuki Sugii, Chunmeng Dou, 2012, Microelectron. Reliab..

Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing

Hiroshi Iwai, Yiming Lei, Kuniyuki Kakushima, 2018, Microelectron. Reliab..

高信頼性と低ゲート漏れ電流を用いたAlGaN/GaNH EMTのためのポリシリコンゲート電極【Powered by NICT】

Hiroshi Iwai, Kuniyuki Kakushima, Kazuo Tsutsui, 2016 .

3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)

Ichiro Omura, Hiroshi Iwai, M. Kobayashi, 2017, 2017 IEEE 12th International Conference on ASIC (ASICON).

An Overview of GaN-based P- and N-channel Power Integrated Circuit Technologies

Hiroshi Iwai, Kuniyuki Kakushima, Hiromichi Ohashi, 2016 .

Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors

Hiroshi Iwai, Yiming Lei, Kuniyuki Kakushima, 2018, Microelectron. Reliab..

Equivalent Noise Temperature Representation for Scaled MOSFETs

Hiroshi Iwai, Kuniyuki Kakushima, Hiroshi Shimomura, 2010, IEICE Trans. Electron..

Comparison of low-temperature electrical characteristics of gate-all-around nanowire FETs, Fin FETs and fully-depleted SOI FETs

Sorin Cristoloveanu, Thomas Ernst, Hiroshi Iwai, 2011, Microelectron. Reliab..

Arrayed AFM Probes for Parallel Lithography

Toshiyuki Watanabe, Hiroyuki Fujita, Manabu Ataka, 2004 .

Durability evaluation of hexagonal WO3 electrode for lithium ion secondary batteries

Wei Li, Hiroshi Iwai, Miho Nakamura, 2017, Microelectron. Reliab..

Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La2O3 gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010, Microelectron. Reliab..

La2O3 gate dielectrics for AlGaN/GaN HEMT

Hiroshi Iwai, Kuniyuki Kakushima, Hitoshi Wakabayashi, 2016, Microelectron. Reliab..

CHALLENGES FOR FUTURE SEMICONDUCTOR MANUFACTURING

Hiroshi Iwai, Kuniyuki Kakushima, Hei Wong, 2006 .

Laser doping for microelectronics and microtechnology

Tarik Bourouina, Kuniyuki Kakushima, Elisabeth Dufour-Gergam, 2004, SPIE High-Power Laser Ablation.

Parasitics effects in multi gate MOSFETs

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2006, 2006 International Workshop on Nano CMOS.

Silicon periodic nano-structures obtained by laser exposure of nano-wires

Hiroyuki Fujita, Tarik Bourouina, Kuniyuki Kakushima, 2005, Microelectron. J..

A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2014, Microelectron. Reliab..

New Device Architectures

Kuniyuki Kakushima, 2016 .

Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm Node MOSFETs

Hiroshi Iwai, Kuniyuki Kakushima, Hiroshi Shimomura, 2010, IEICE Trans. Electron..

Analysis and modeling of the gate leakage current in advanced nMOSFET devices with severe gate-to-drain dielectric breakdown

Jordi Suñé, Hiroshi Iwai, Kuniyuki Kakushima, 2012, Microelectron. Reliab..

A Micromachined Nano tweezers Integrated with a Thermal Expansion Micro Actuator

Hiroyuki Fujita, Manabu Ataka, Kuniyuki Kakushima, 2003 .

Subthreshold parameters of radio-frequency multi-finger nanometer MOS transistors

Hiroshi Iwai, Kuniyuki Kakushima, Hei Wong, 2009, Microelectron. Reliab..

Electrical characteristics of MOSFETs with La2O3/Y2O3 gate stack

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2008, Microelectron. Reliab..

Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2013, 2013 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

Switching of 3300V Scaled IGBT by 5V Gate Drive

Masanori Tsukuda, Ichiro Omura, Hiroshi Iwai, 2019, 2019 IEEE 13th International Conference on ASIC (ASICON).

Oxide and interface trap densities estimation in ultrathin W/La2O3/Si MOS capacitors

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2012, Microelectron. Reliab..

Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current

Hiroshi Iwai, Kuniyuki Kakushima, Hitoshi Wakabayashi, 2016, Microelectron. Reliab..

On the current conduction mechanisms of CeO2/La2O3 stacked gate dielectric

Hiroshi Iwai, Shurong Dong, Kuniyuki Kakushima, 2014, Microelectron. Reliab..

Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2016, Microelectron. Reliab..

(Invited) High-K Evolution: Subnanometer EOT Challenges and Future Perspectives for Scaling

Kuniyuki Kakushima, Hei Wong, Jieqiong Zhang, 2017 .

Electrical Conductivity of Lambda DNA–Pd Wire

Hiroyuki Fujita, Kuniyuki Kakushima, Gen Hashiguchi, 2005, International Symposium on Optomechatronic Technologies.

Analysis of dependence of short-channel effects in double-gate MOSFETs on channel thickness

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2010, Microelectron. Reliab..

(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2012, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC).

n~+およびp~+Si底部電極上にCeO_xバッファ層を持つ薄いSiO_2層の抵抗スイッチング特性【Powered by NICT】

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2016 .

Structural advantages of rectangular-like channel cross-section on electrical characteristics of silicon nanowire field-effect transistors

Hiroshi Iwai, Kenji Ohmori, Kuniyuki Kakushima, 2011, Microelectron. Reliab..

Effective mobility and interface-state density of La2O3 nMISFETs after post deposition annealing

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2006, IEICE Electron. Express.

Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric

Hiroshi Iwai, Kuniyuki Kakushima, Hei Wong, 2012, Microelectron. Reliab..

Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2007, IEICE Electron. Express.

Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes

Wei Li, Hiroshi Iwai, Nobuyuki Sugii, 2015, Microelectron. Reliab..

SrO capping effect for La2O3/Ce-silicate gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010, Microelectron. Reliab..

Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately

Ken Takeuchi, Kuniyuki Kakushima, Toshiro Hiramoto, 2018, 2018 48th European Solid-State Device Research Conference (ESSDERC).

New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment

Ken Takeuchi, Hiroshi Iwai, Kuniyuki Kakushima, 2018, 2018 IEEE Symposium on VLSI Circuits.

Si nanowire FET and its modeling

Hiroshi Iwai, Kenji Ohmori, Kuniyuki Kakushima, 2011, Science China Information Sciences.

Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity

Wei Li, Hiroshi Iwai, Nobuyuki Sugii, 2015, Microelectron. Reliab..

Beyond CMOS Devices

Kuniyuki Kakushima, 2015 .

Selection of rare earth silicates for highly scaled gate dielectrics

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2010 .

Extraction of additional interfacial states of silicon nanowire field-effect transistors

Wei Li, Hiroshi Iwai, Kenji Natori, 2011 .

Electrical Characterization of La2O3-Gated Metal Oxide Semiconductor Field Effect Transistor with Mg Incorporation

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2009 .

Gate Technology Contributions to Collapse of Drain Current in AlGaN/GaN Schottky HEMT

Hiroshi Iwai, Nobuyuki Sugii, Kenji Natori, 2014, IEEE Transactions on Electron Devices.

Effect of Deposition Temperature on Chemical Structure of Lanthanum Oxide/Si Interface Structure

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2006 .

Electrical characterization of Si nanowire field-effect transistors with semi gate-around structure suitable for integration

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2010 .

Gate semi-around Si nanowire FET fabricated by conventional CMOS process with very high drivability

Hiroshi Iwai, Kenji Natori, Kuniyuki Kakushima, 2010, 2010 Proceedings of the European Solid State Device Research Conference.

Mobility Degradation Analysis for La2O3 nMISFET

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2006 .

Evaluation of Lateral Ni Diffusion in Si Nanowire Schottky Contact

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2009 .

GaN-based monolithic power integrated circuit technology with wide operating temperature on polarization-junction platform

Hiroshi Iwai, Kuniyuki Kakushima, Hiromichi Ohashi, 2015, 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Bilayer gate dielectric study by scanning tunneling microscopy

Hiroshi Iwai, Cedric Troadec, Kuniyuki Kakushima, 2007 .

Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy

Hiroshi Iwai, Nagarajan Raghavan, Kuniyuki Kakushima, 2011 .

Experimental study for high effective mobility with directly deposited HfO2/La2O3 MOSFET

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2009 .

A resistive switching device based on breakdown and anodic reoxidization of thin SiO2 on Si-based electrodes using CeOx buffer layer

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2014 .

Electrical Conductivity of Lambda DNA–Pd Wire

Hiroyuki Fujita, Kuniyuki Kakushima, Gen Hashiguchi, 2005 .

Size-dependent properties of ballistic silicon nanowire field effect transistors

Hiroshi Iwai, Kenji Natori, Kuniyuki Kakushima, 2010 .

Trade-off between density of states and gate capacitance in size-dependent injection velocity of ballistic n-channel silicon nanowire transistors

Hiroshi Iwai, Kenji Natori, Kuniyuki Kakushima, 2010 .

Role of Dislocation Movement in the Electrical Conductance of Nanocontacts

Hiroyuki Fujita, Kuniyuki Kakushima, Teruyasu Mizoguchi, 2012, Scientific Reports.

Trapping characteristics of lanthanum oxide gate dielectric film explored from temperature dependent current-voltage and capacitance-voltage measurements

Hiroshi Iwai, Kuniyuki Kakushima, Chandan Kumar Sarkar, 2007 .

Advantages of Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect Transistors over Planar Ones in Noise Properties

Hiroshi Iwai, Kuniyuki Kakushima, Soshi Sato, 2012 .

DNA manipulation and retrieval from an aqueous solution with micromachined nanotweezers.

Hiroyuki Fujita, Noritada Kaji, Kuniyuki Kakushima, 2003, Analytical chemistry.

Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices

Hiroshi Iwai, Kuniyuki Kakushima, C. Dou, 2012 .

Atomic Force Microscope Cantilever Array for Parallel Lithography of Quantum Devices

Hiroyuki Fujita, Manabu Ataka, Kuniyuki Kakushima, 2004 .

Annealing Reaction for Ni Silicidation of Si Nanowire

Hiroshi Iwai, Nobuyuki Sugii, Kenji Natori, 2009 .

Leakage current and structural analysis of annealed HfO2/La2O3 and CeO2/La2O3 dielectric stacks: A nanoscopic study

Hiroshi Iwai, Kuniyuki Kakushima, Michel Bosman, 2014 .

Current conduction and stability of CeO2/La2O3 stacked gate dielectric

Hiroshi Iwai, Shurong Dong, Kuniyuki Kakushima, 2012 .

Annealing-temperature Dependence of Compositional Depth Profiles and Chemical Bonding States of CeOx/LaOx/Si and LaOx/CeOx/Si Structure

Hiroshi Iwai, Kuniyuki Kakushima, Hiroshi Nohira, 2009 .

XPS Study of the Bonding Properties of Lanthanum Oxide/Silicon Interface with a Trace Amount of Nitrogen Incorporation

Hiroshi Iwai, Kuniyuki Kakushima, Hei Wong, 2010 .

Valence number transition and silicate formation of cerium oxide films on Si(100)

H. Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2012 .

An Overview of GaN-Based Monolithic Power Integrated Circuit Technology on Polarization-Junction Platform

Hiroshi Iwai, Kuniyuki Kakushima, Hiromichi Ohashi, 2015, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

Impact of Thin La2O3 Insertion for HfO2 MOSFET

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2008 .

High-performance Si Nanowire FET with a semi gate-around structure suitable for integration

Hiroshi Iwai, Kuniyuki Kakushima, Parhat Ahmet, 2009, 2009 Proceedings of the European Solid State Device Research Conference.

Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation

Hiroshi Iwai, Kuniyuki Kakushima, Y. Nara, 2007 .

In situ visualization of degradation of silicon field emitter tips

Hiroyuki Fujita, Kuniyuki Kakushima, Gen Hashiguchi, 2007 .

Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2005 .

Rf microelectromechanical system device with a lateral field-emission detector

Hiroyuki Fujita, Hiroshi Toshiyoshi, Kuniyuki Kakushima, 2006 .

Properties of CeOx/La2O3 gate dielectric and its effects on the MOS transistor characteristics

H. Iwai, Kuniyuki Kakushima, Hei Wong, 2012 .

Effect of Oxygen for Ultra-Thin La2O3 Film Deposition

Hiroshi Iwai, Nobuyuki Sugii, Kuniyuki Kakushima, 2006 .