Kunihiko Iwamoto

Carrier separation analysis for clarifying carrier conduction and degradation mechanisms in high-k stack gate dielectrics

Kenji Okada, Koji Tominaga, Tsuyoshi Horikawa, 2005, Microelectron. Reliab..

0.6nm-EOT high-k gate stacks with HfSiOx interfacial layer grown by solid-phase reaction between HfO 2 and Si substrate

A. Toriumi, Toshihide Nabatame, Yukinori Morita, 2007 .

Low frequency noise characteristics in HfAlOx/SiO2 n-MOSFETs

Koji Akiyama, Koji Tominaga, A. Toriumi, 2004 .

Limit of gate oxide thickness scaling in MOSFETs due to apparent threshold voltage fluctuation induced by tunnel leakage current

T. Ono, Hideki Murakami, Seiichi Miyazaki, 2001 .

Experimental evidence for the flatband voltage shift of high-k metal-oxide-semiconductor devices due to the dipole formation at the high-k∕SiO2 interface

A. Toriumi, Shinji Migita, Toshihide Nabatame, 2008 .

Advantages of HfAlON gate dielectric film for advanced low power CMOS application

Koji Tominaga, Tsuyoshi Horikawa, Akira Toriumi, 2005 .