Kenji Iso

Recent progress of large size and low dislocation bulk GaN growth

Tatsuya Takahashi, Yutaka Mikawa, Takayuki Ishinabe, 2020, OPTO.

Dislocation density reduction in (101 ̅1 ̅) GaN at a high temperature using tri-halide vapor phase epitaxy

Hisashi Murakami, Kenji Iso, Shoma Ohtaki, 2020, OPTO.

Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0   0) and semipolar (1 1   2) orientations

Hisashi Yamada, Shuji Nakamura, Hisashi Masui, 2009 .

Continuous-wave Operation of AlGaN-cladding-free Nonpolar m-Plane InGaN/GaN Laser Diodes

Hisashi Yamada, Mathew C. Schmidt, James S. Speck, 2007 .

Compositional Dependence of Nonpolar m-Plane InxGa1-xN/GaN Light Emitting Diodes

Shuji Nakamura, Makoto Saito, Hisashi Masui, 2008 .