Kazumasa Hiramatsu

发表

Fabrication and optical characterization of a 2D metal periodic grating structure for cold filter application

Hideto Miyake, Atsushi Motogaito, Masanori Kito, 2015, SPIE Micro + Nano Materials, Devices, and Applications.

Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy

Theeradetch Detchprohm, Isamu Akasaki, Kazumasa Hiramatsu, 1993 .

Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer

Theeradetch Detchprohm, Isamu Akasaki, Hiroshi Amano, 1992 .

Optical microscopy of electronic and structural properties of epitaxial laterally overgrown GaN

Juergen Christen, Christian Thomsen, Frank Bertram, 1999 .

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE

Isamu Akasaki, Hiroshi Amano, Kazumasa Hiramatsu, 1989 .

Defect structure in selective area growth GaN pyramid on (111)Si substrate

Kazumasa Hiramatsu, Nobuhiko Sawaki, Michio Hibino, 2000 .

Electron beam effects on blue luminescence of zinc-doped GaN

Takahiro Kozawa, Yoshikazu Ishii, Isamu Akasaki, 1988 .

Impact of high-temperature annealing of AlN layer on sapphire and its thermodynamic principle

Hiroyuki Fukuyama, Hideto Miyake, Kazumasa Hiramatsu, 2016 .

MOVPE growth of thick homogeneous InGaN directly on sapphire substrate using AlN buffer layer

Masaya Shimizu, Kazumasa Hiramatsu, Nobuhiko Sawaki, 1997 .

The growth of single crystalline GaN on a Si substrate using AIN as an intermediate layer

Isamu Akasaki, Hiroshi Amano, Kazumasa Hiramatsu, 1993 .

Effect of thermal annealing on hole trap levels in Mg-doped GaN grown by metalorganic vapor phase epitaxy

Kazumasa Hiramatsu, Nobuhiko Sawaki, Qin-Sheng Zhu, 2000 .

Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED

Isamu Akasaki, Hiroshi Amano, Kazumasa Hiramatsu, 1991 .

Epitaxial lateral overgrowth of GaN structures : spatially resolved characterization by cathodoluminescence microscopy and micro-Raman spectroscopy

Andreas Hoffmann, Juergen Christen, Frank Bertram, 1999 .

Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

Chia-Hung Lin, Hideto Miyake, Kazumasa Hiramatsu, 2016 .

Impacts of Si-doping and resultant cation vacancy formation on the luminescence dynamics for the near-band-edge emission of Al0.6Ga0.4N films grown on AlN templates by metalorganic vapor phase epitaxy

Kentaro Furusawa, Hideto Miyake, K. Hazu, 2013 .

Analysis of deep levels in n‐type GaN by transient capacitance methods

Theeradetch Detchprohm, Peter Hacke, Kazuyuki Tadatomo, 1994 .

Deep levels in the upper band-gap region of lightly Mg-doped GaN

Theeradetch Detchprohm, Peter Hacke, Kazumasa Hiramatsu, 1996 .

Growth and Luminescence Properties of Mg‐Doped GaN Prepared by MOVPE

Isamu Akasaki, Hiroshi Amano, Kazumasa Hiramatsu, 1990 .

Metalorganic Vapor Phase Epitaxy Growth and Study of Stress in AlGaN Using Epitaxial AlN as Underlying Layer

Yoshihiro Kida, Hideto Miyake, Kazumasa Hiramatsu, 2003 .

Relaxation Process of the Thermal Strain in the GaN/α-Al2O3 Heterostructure and Determination of the Intrinsic Lattice Constants of GaN Free from the Strain

Theeradetch Detchprohm, Isamu Akasaki, Kenji Itoh, 1992 .

Dependence of internal quantum efficiency on doping region and Si concentration in Al-rich AlGaN quantum wells

Hideaki Murotani, Hideto Miyake, Kazumasa Hiramatsu, 2012 .

Schottky barrier on n‐type GaN grown by hydride vapor phase epitaxy

Theeradetch Detchprohm, Peter Hacke, Kazumasa Hiramatsu, 1993 .

n‐type conductivity control of AlGaN with high Al mole fraction

Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, 2006 .

Characterization of GaN Based UV‐VUV Detectors in the Range 3.4–25 eV by Using Synchrotron Radiation

Kazuyuki Tadatomo, Kazumasa Hiramatsu, Kazutoshi Fukui, 2001 .

OPTICAL AND CRYSTALLINE PROPERTIES OF EPITAXIAL-LATERAL-OVERGROWN-GAN USING TUNGSTEN MASK BY HYDRIDE VAPOR PHASE EPITAXY

Hiroki Sone, Hideto Miyake, Masahito Yamaguchi, 1999 .

Fabrication of Binary Diffractive Lenses and the Application to LED Lighting for Controlling Luminosity Distribution

Kazumasa Hiramatsu, Atsushi Motogaito, 2013 .

Annealing of an AlN buffer layer in N2–CO for growth of a high-quality AlN film on sapphire

Hiroyuki Fukuyama, Hideto Miyake, Kazumasa Hiramatsu, 2016 .

Freestanding GaN Substrate by Advanced Facet-Controlled Epitaxial Lateral Overgrowth Technique with Masking Side Facets

Hideto Miyake, Kazumasa Hiramatsu, Takayoshi Maeda, 2004 .