J. Nasadoski

Static and dynamic characterization of 6.5kV, 100A SiC Bipolar PiN Diode modules

A. Elasser, M. Agamy, J. Nasadoski, 2012, 2012 IEEE Energy Conversion Congress and Exposition (ECCE).

3.3kV SiC MOSFETs designed for low on-resistance and fast switching

Lei Wang, A. Elasser, J. Nasadoski, 2012, 2012 24th International Symposium on Power Semiconductor Devices and ICs.

DC and Transient Performance of 4H-SiC Double-Implant MOSFETs

J. Nasadoski, L. Stevanovic, Z. Stum, 2008, IEEE Transactions on Electron Devices.