T. Andoh

Design methodology for low-voltage MOSFETs

T. Andoh, A. Furukawa, T. Kunio, 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

16 Mbit SRAM cell technologies for 2.0 V operation

H. Ohkubo, M. Ohkawa, M. Soeda, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Highly reliable W/TiN/pn-poly-Si gate CMOS technology with simultaneous gate and source/drain doping process

H. Wakabayashi, T. Mogami, T. Andoh, 1996, International Electron Devices Meeting. Technical Digest.