B. R. Ryum

An analytical all-injection charge-based model for graded-base HBTs

Ibrahim M. Abdel-Motaleb, B. R. Ryum, I. Abdel-Motaleb, 1991 .

Atmospheric pressure CVD-grown SiGe base HBT with the highest value of current gain-Early voltage product

B. R. Ryum, T.-H. Han, D.-H. Cho, 1995, 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings.

Reduced Pressure CVD-Grown SiGe Base HBT for Preamplifier in 10Gbps Optical Transmission Receiver

K. E. Pyun, B. W. Kim, B. R. Ryum, 1997 .

SiGE Epitaxial Base Heterojunction Bipolar Transistor : An Overview and Current Results at ETRI

B. R. Ryum, D. H. Cho, T. H. Han, 1994 .

Modeling of junction capacitances of graded base heterojunction bipolar transistors

B. R. Ryum, Ibrahim M. Abdel-Motaleb, I. Abdel-Motaleb, 1991 .

A Gummel-Poon model for abrupt and graded heterojunction bipolar transistors (HBTs)

B. R. Ryum, Ibrahim M. Abdel-Motaleb, I. Abdel-Motaleb, 1990 .

Low power consumption and low phase noise 2.4 GHz VCO using SiGe HBT for WLL application

B. R. Ryum, T.-H. Han, D. H. Cho, 1997 .