H.C. Wen

Challenges in implementing high-k dielectrics in the 45nm technology node

G. Bersuker, B.H. Lee, P. Majhi, 2005, 2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005..

Laminated metal gate electrode with tunable work function for advanced CMOS

N. Balasubramanian, D.L. Kwong, W.P. Bai, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Three-Layer laminated metal gate electrodes with tunable work functions for CMOS applications

N. Balasubramanian, S. Mathew, H.C. Wen, 2005, IEEE Electron Device Letters.

Dual-work-function metal gates by full silicidation of poly-Si with Co-Ni bi-Layers

J. Liu, H.C. Wen, D. Kwong, 2005, IEEE Electron Device Letters.

Intrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)

G. Bersuker, M. Gardner, P. Zeitzoff, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Thermally Stable N-Metal Gate MOSFETs Using La-Incorporated HfSiO Dielectric

R. Jammy, B.H. Lee, P. Majhi, 2006, 2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers..

Work function tuning of fully silicided NiSi metal gates using a TiN capping layer

H.C. Wen, D. Kwong, H. Wen, 2004, IEEE Electron Device Letters.

Mechanism of Vfb roll-off with High Work function Metal Gate and Low Temperature Oxygen Incorporation to Achieve PMOS Band Edge Work function

R. Jammy, B.H. Lee, S.C. Song, 2007, 2007 IEEE International Electron Devices Meeting.