E. Landgraf

High resolution 2D Scanning Spreading Resistance Microscopy (SSRM) of thin film SOI MOSFETs with ultra short effective channel length

L. Dreeskornfeld, M. Specht, M. Stadele, 2003, 2003 IEEE International Conference on SOI.

A comprehensive study of corner effects in tri-gate transistors

L. Dreeskornfeld, M. Specht, L. Risch, 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

Off current adjustment in ultra-thin SOI MOSFETs

L. Dreeskornfeld, M. Specht, F. Hofmann, 2004, Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat. No.04EX850).

Sub-40nm tri-gate charge trapping nonvolatile memory cells for high-density applications

H. Reisinger, L. Dreeskornfeld, W. Weber, 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..

Impact ionization and band-to-band tunneling in ultrathin body SOI devices with undoped channels

L. Dreeskornfeld, M. Stadele, R. J. Luyken, 2003, 2003 IEEE International Conference on SOI.

Drain leakage mechanisms in fully depleted SOI devices with undoped channel [MOSFETs]

L. Dreeskornfeld, J. Hartwich, L. Risch, 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..

Novel dual bit tri-gate charge trapping memory devices

H. Reisinger, L. Dreeskornfeld, J. Hartwich, 2004, IEEE Electron Device Letters.

20 nm tri-gate SONOS memory cells with multi-level operation

H. Reisinger, L. Dreeskornfeld, J. Hartwich, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

Multi-level p+ tri-gate SONOS NAND string arrays

L. Dreeskornfeld, J. Hartwich, L. Risch, 2006, 2006 International Electron Devices Meeting.