Eunseok Choi

Analysis on Program Disturbance in Channel-Stacked NAND Flash Memory With Layer Selection by Multilevel Operation

Sang-Ho Lee, Byung-Gook Park, Dae Woong Kwon, 2016, IEEE Transactions on Electron Devices.

Analysis of Random Telegraph Noise and low frequency noise properties in 3-d stacked NAND flash memory with tube-type poly-Si channel structure

Jong-Ho Lee, Sung-Min Joe, Sung-Kye Park, 2012, 2012 Symposium on VLSI Technology (VLSIT).

Comprehensive analysis of retention characteristics in 3-D NAND flash memory cells with tube-type poly-Si channel structure

Byung-Gook Park, Jong-Ho Lee, Sung-Min Joe, 2015, 2015 Symposium on VLSI Technology (VLSI Technology).

Highly reliable M1X MLC NAND flash memory cell with novel active air-gap and p+ poly process integration technologies

Sungkye Park, Honam Yoo, Eunseok Choi, 2013, 2013 IEEE International Electron Devices Meeting.

Multi-Level Threshold Voltage Setting Method of String Select Transistors for Layer Selection in Channel Stacked NAND Flash Memory

Byung-Gook Park, Dae Woong Kwon, Joo Yun Seo, 2015, IEEE Electron Device Letters.

Characterization of traps in 3-D stacked NAND flash memory devices with tube-type poly-Si channel structure

Byung-Gook Park, Kyoung-Rok Han, Jong-Ho Lee, 2012, 2012 International Electron Devices Meeting.