W. S. Lau

Thermal stability of MISFET with low-temp molecular-beam epitaxy-grown GaAs and Al0.3Ga0.7As gate ins

L. S. Tan, R. V. V. V. J. Rao, T. C. Chong, 2000, IEEE Trans. Reliab..

A comparison of the selective etching characteristics of conventional and low-temperature-grown GaAs over AlAs by various etching solutions

Tow Chong Chong, Ming-Fu Li, W. S. Lau, 1996 .

Study of electron traps in semi‐insulating gallium‐arsenide buffer layers for the suppression of backgating by the zero‐bias thermally stimulated current technique

W. S. Lau, T. Chong, L. Tan, 1992 .

High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy

W. S. Lau, T. Chong, L. Tan, 1996 .

Low-temperature grown GaAs and Al/sub 0.3/Ga/sub 0.7/As MISFETs-characterization and model development

W. S. Lau, T. Chong, L. Tan, 1999, 1999 Symposium on High Performance Electron Devices for Microwave and Optoelectronic Applications. EDMO (Cat. No.99TH8401).

New electron and hole traps in GaAsP alloy

W. S. Lau, K. Teo, C. H. Goo, 1997 .

Defect Characterization of High-Rate Deposited Hydrogenated Amorphous Silicon Films

W. S. Lau, S. Chua, S. Lin, 1996 .

Transient current spectroscopy and frequency dispersion studies of low temperature GaAs and Al0.3Ga0.7As metal-insulator-semiconductor diodes

W. S. Lau, T. Chong, L. Tan, 1999 .

Quantitative analysis of electron traps in annealed semi-insulating gallium arsenide epitaxial layers grown by molecular beam epitaxy at low temperature with a novel zero quiescent bias voltage transient current spectroscopy technique

W. S. Lau, T. C. Chong, C. H. Goo, 1992, Proceedings of the 7th Conference on Semi-insulating III-V Materials,.

A Study of Traps in Semi-Insulating III-V Epitaxial Films by Zero Bias Transient Current Spectroscopy

W. S. Lau, T. Chong, C. H. Goo, 1994 .

Effects of Low-Temperature Grown GaAs Intermediate Layers on the Crystalline Quality of GaAs-on-Si Epilayers

W. S. Lau, T. Chong, L. Tan, 1994 .

Trap signatures of As precipitates and As‐antisite‐related defects in GaAs epilayers grown by molecular beam epitaxy at low temperatures

W. S. Lau, T. Chong, L. Tan, 1996 .