Antonio Crespo

发表

ITIL v3: complicado, pero no imposible

Antonio Crespo, 2008 .

Survey of modelling methods for wind turbine wakes and wind farms

Julio Hernández, Sten Tronæs Frandsen, Antonio Crespo, 1999 .

Dielectric optical waveguide coupling analysis using two-dimensional finite difference in time-domain and frequency-domain simulations

Paul Sotirelis, Antonio Crespo, Lee L. Liou, 2002, SPIE OPTO.

CAPRICORE, A NEW ON-LINE CORE MONITORING SYSTEM

Antonio Crespo, Manuel Albendea, Iberdrola Ingeniería, 1998 .

Nonsymmetric AlGaN directional coupler switch analysis

Antonio Crespo, Mohammad A. Karim, 1998, Optics & Photonics.

$\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation

Zbigniew Galazka, Michele Baldini, Kevin Leedy, 2017, IEEE Electron Device Letters.

Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN∕GaN high electron mobility transistors

Hung-Ta Wang, Stephen J. Pearton, Brent P. Gila, 2005 .

Hydrogen-induced reversible changes in drain current in Sc2O3/AlGaN/GaN high electron mobility transistors

Rishabh Mehandru, S. J. Pearton, Brent P. Gila, 2004 .

Recessed-Gate Enhancement-Mode $\beta $ -Ga2O3 MOSFETs

Jonathan P. McCandless, Krishnamurthy Mahalingam, Brandon M. Howe, 2018, IEEE Electron Device Letters.

Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors

Ivan I. Kravchenko, Stephen J. Pearton, Dennis E. Walker, 2013 .

Hydrogen sensors based on Sc2O3/AlGaN/GaN high electron mobility transistors

Rishabh Mehandru, S. J. Pearton, Brent P. Gila, 2005 .

Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors

Stephen J. Pearton, Brent P. Gila, C. R. Abernathy, 2003 .

Processing Methods for Low Ohmic Contact Resistance in AlN/GaN MOSHEMTs

David H. Tomich, V. Miller, Antonio Crespo, 2009 .

ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance

Yu Cao, Dennis E. Walker, Andrew J. Green, 2019, IEEE Electron Device Letters.

Improved morphology for ohmic contacts to AlGaN/GaN high electron mobility transistors using WSix- or W-based metallization

Albert G. Baca, S. J. Pearton, T. Jenkins, 2003 .

3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs

Zbigniew Galazka, Michele Baldini, Eric R. Heller, 2016, IEEE Electron Device Letters.

Annealing temperature stability of ir and ni-based ohmic contacts on AlGaN/GaN high electron mobility transistors

Amir Dabiran, Andrei Osinsky, Stephen J. Pearton, 2004 .

Electrical characteristics of proton-irradiated Sc2O3 passivated AlGaN/GaN high electron mobility transistors

Richard Wilkins, S. J. Pearton, Brent P. Gila, 2003 .

Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage

Kevin D. Leedy, Zbigniew Galazka, Eric R. Heller, 2016 .

Investigating the effect of off-state stress on trap densities in AlGaN/GaN high electron mobility transistors

Stephen J. Pearton, Dennis E. Walker, R. C. Fitch, 2011 .