Shun'ichiro Ohmi

发表

A Study on Substrate Orientation Dependence of Si Surface Flattening Process by Sacrificial Oxidation and Its Effect on MIS Diode Characteristics

Sohya Kudoh, Shun'ichiro Ohmi, S. Ohmi, 2016, IEICE Trans. Electron..

Flattening Process of Si Surface below 1000°C Utilizing Ar/4.9%H2 Annealing and Its Effect on Ultrathin HfON Gate Insulator Formation

Shun'ichiro Ohmi, Dae-Hee Han, S. Ohmi, 2013, IEICE Trans. Electron..

Improvement of Endurance Characteristics for Al-Gate Hf-Based MONOS Structures on Atomically Flat Si(100) Surface Realized by Annealing in Ar/H2 Ambient

Sohya Kudoh, Shun'ichiro Ohmi, 2018, IEICE Trans. Electron..

High Quality Pentacene Film Formation on N-Doped LaB6 Donor Layer

Tadahiro Ohmi, Shun'ichiro Ohmi, Yasutaka Maeda, 2016, IEICE Trans. Electron..

Low contact resistivity of barrier height controlled PtHfSi to Si evaluated by cross-bridge Kelvin resistor

Jun Gao, Shun'ichiro Ohmi, 2011, IEICE Electron. Express.

A study on precise control of PtSi work function by alloying with Hf

Jun Gao, Shun'ichiro Ohmi, Jumpei Ishikawa, 2011, IEICE Electron. Express.

Investigation of bilayer HfNx gate insulator utilizing ECR plasma sputtering

Shun'ichiro Ohmi, Nithi Atthi, 2016, IEICE Electron. Express.

Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer

Shun'ichiro Ohmi, Hiroshi Ishiwara, Young-Uk Song, 2010, IEICE Trans. Electron..

Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors

Shun'ichiro Ohmi, Hiroshi Ishiwara, Min Liao, 2012, IEICE Trans. Electron..

AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs

Shun'ichiro Ohmi, Yasutaka Maeda, Mizuha Hiroki, 2019, IEICE Trans. Electron..

A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics

Sohya Kudoh, Shun'ichiro Ohmi, S. Ohmi, 2015, IEICE Trans. Electron..

A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels

Shun'ichiro Ohmi, Tetsushi Sakai, 2007, IEICE Trans. Electron..

PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process

Shun'ichiro Ohmi, Yuya Tsukamoto, Weiguang Zuo, 2018, IEICE Trans. Electron..

In-situ formation of Hf-based MONOS structures for non-volatile memory applications

Shun'ichiro Ohmi, Yeyuan Liu, 2015, IEICE Electron. Express.

Experimental demonstration of a ferroelectric FET using paper substrate

Seung-Hyun Kim, Shun'ichiro Ohmi, Yun Jeong Hwang, 2014, IEICE Electron. Express.

Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering

Shun'ichiro Ohmi, Huiseong Han, S. Ohmi, 2012, IEICE Electron. Express.

Selective etching of HfN gate electrode for HfN/HfSiON gate stack in-situ formations

Shun'ichiro Ohmi, Takahiro Sano, 2011, IEICE Electron. Express.

Silicon integrated circuit technology from past to future

Hiroshi Iwai, Shun'ichiro Ohmi, H. Iwai, 2002, Microelectron. Reliab..

Ultrathin HfOxNy Gate Insulator Formation by Electron Cyclotron Resonance Ar/N2 Plasma Nitridation of HfO2 Thin Films

Masaki Satoh, Shun'ichiro Ohmi, Tomoki Kurose, 2006, IEICE Trans. Electron..

Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator

Shun'ichiro Ohmi, Hiroshi Ishiwara, Min Liao, 2011, IEICE Electron. Express.

Electron Injection of N-type Pentacene-Based OFET with Nitrogen-Doped LaB6 Bottom-Contact Electrodes

Shun'ichiro Ohmi, Yasutaka Maeda, Mizuha Hiroki, 2018, IEICE Trans. Electron..

PdYb-Silicide with Low Schottky Barrier Height to n-Si Formed from Pd/Yb/Si(100) Stacked Structures

Shun'ichiro Ohmi, Weiguang Zuo, Yasushi Masahiro, 2017, IEICE Trans. Electron..

Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering

Tadahiro Ohmi, Shun'ichiro Ohmi, Dae-Hee Han, 2014, IEICE Trans. Electron..

Impact of Si surface roughness on MOSFET characteristics with ultrathin HfON gate insulator formed by ECR plasma sputtering

Shun'ichiro Ohmi, Dae-Hee Han, Huiseong Han, 2013, IEICE Electron. Express.

Effect of Nitrogen-Doped LaB6 Interfacial Layer on Device Characteristics of Pentacene-Based OFET

Tadahiro Ohmi, Shun'ichiro Ohmi, Yasutaka Maeda, 2017, IEICE Trans. Electron..

Work function modulation of PtSi by alloying with Yb

Jun Gao, Shun'ichiro Ohmi, Jumpei Ishikawa, 2011, IEICE Electron. Express.

PtHf Silicide Formation Utilizing PtHf-Alloy Target for Low Contact Resistivity

Shun'ichiro Ohmi, Xiaopeng Wu, Yasushi Masahiro, 2016, IEICE Trans. Electron..

Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications

Shinya Morita, Shun'ichiro Ohmi, Masao Sakuraba, 2005, IEICE Trans. Electron..

Modulation of PtSi Work Function by Alloying with Low Work Function Metal

Jun Gao, Shun'ichiro Ohmi, Jumpei Ishikawa, 2010, IEICE Trans. Electron..

Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system

Shun'ichiro Ohmi, S. Ohmi, 2014, IEICE Electron. Express.