J. Liberis

发表

Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels

Hadis Morkoç, Arvydas Matulionis, J. Liberis, 2010, OPTO.

Hot‐electron drift velocity and hot‐phonon decay in AlInN/AlN/GaN

Hadis Morkoç, Arvydas Matulionis, J. Liberis, 2011 .

Hot-phonon temperature and lifetime in a biased Al x Ga 1 − x N / G a N channel estimated from noise analysis

Lester F. Eastman, James R. Shealy, M. Ramonas, 2003 .

Ultrafast decay of hot phonons in an AlGaN/AlN/AlGaN/GaN camelback channel

Hadis Morkoç, Jacob H. Leach, M. Ramonas, 2011 .

Electron drift velocity in AlGaN/GaN channel at high electric fields

Lester F. Eastman, James R. Shealy, M. Ramonas, 2003 .

Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels

Hadis Morkoç, Jacob H. Leach, Arvydas Matulionis, 2008 .

Hot-phonon effect on power dissipation in a biasedAlxGa1−xN∕AlN∕GaNchannel

Lester F. Eastman, M. Ramonas, J. Liberis, 2005 .

Self-heating and microwave noise in AlGaN/GaN

Lester F. Eastman, James R. Shealy, J. Liberis, 2004 .

Camelback channel for fast decay of LO phonons in GaN heterostructure field-effect transistor at high electron density

Hadis Morkoç, V. Avrutin, Jacob H. Leach, 2011 .

Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors

Fan Zhang, Hadis Morkoç, V. Avrutin, 2013 .

MICROWAVE NOISE TECHNIQUE FOR MEASUREMENT OF HOT-ELECTRON ENERGY RELAXATION TIME AND HOT-PHONON LIFETIME ⁄

J. Liberis, A. Matulionis, 2007 .

Hot-phonon lifetime in AlGaN/GaN at a high lattice temperature

Lester F. Eastman, James R. Shealy, J. Liberis, 2004 .

Effect of hot phonon lifetime on electron velocity in InAlN/AlN/GaN heterostructure field effect transistors on bulk GaN substrates

Hadis Morkoç, Xianfeng Ni, Ümit Özgür, 2010 .

Optimal 2 DEG Density for Plasmon‐Assisted Ultrafast Decay of Hot Phonons

J. Liberis, A. Matulionis, E. Šermukšnis, 2009 .

Stress test measurements of lattice-matched InAlN/AlN/GaN HFET structures

Cagliyan Kurdak, Hadis Morkoç, Xianfeng Ni, 2010 .

Novel fluctuation‐based approach to optimization of frequency performance and degradation of nitride heterostructure field effect transistors

Hadis Morkoç, Jacob H. Leach, J. Liberis, 2011 .

Degradation in InAlN/GaN-based heterostructure field effect transistors: Role of hot phonons

Xing Li, Cagliyan Kurdak, Hadis Morkoç, 2009 .

Plasmon-enhanced heat dissipation in GaN-based two-dimensional channels

Hadis Morkoç, Xianfeng Ni, Jacob H. Leach, 2009 .