Katsuyuki Fukutani

Mechanism of gate dielectric degradation by hydrogen migration from the cathode interface

Mitsuhiro Tomita, Masamichi Suzuki, Kikuo Yamabe, 2017, Microelectron. Reliab..

Special issue on surface science.

Kiyotaka Asakura, Katsuyuki Fukutani, Hans-Joachim Freund, 2014, Chemical record.

Reliability driven guideline for BEOL Optimization: Protecting MOS stacks from hydrogen-related impurity penetration

Ziyuan Liu, Markus Wilde, Katsuyuki Fukutani, 2012, 2012 IEEE International Conference on IC Design & Technology.