R. Southwick

SOI FinFET versus bulk FinFET for 10nm and below

Xin Sun, Terence B. Hook, E. Nowak, 2014, 2014 SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).

FINFET technology featuring high mobility SiGe channel for 10nm and beyond

D. Liu, P. Oldiges, N. Loubet, 2016, 2016 IEEE Symposium on VLSI Technology.

Fundamental limitations of existing models and future solutions for dielectric reliability and RRAM applications (invited)

B. Li, J. Stathis, E. Wu, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

Modeling of NBTI time kinetics and T dependence of VAF in SiGe p-FinFETs

S. Mahapatra, M. Wang, R. Southwick, 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

A 10nm platform technology for low power and high performance application featuring FINFET devices with multi workfunction gate stack on bulk and SOI

B. Lherron, D. Chanemougame, P. Oldiges, 2014, 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.

A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels

P. Oldiges, C. Park, N. Loubet, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

10nm FINFET technology for low power and high performance applications

D. Chanemougame, P. Oldiges, B. Haran, 2014, 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT).

Validity and Application of the TCR Method to MOL contactS

C. Janicki, R. Southwick, V. Kamineni, 2018, 2018 IEEE International Interconnect Technology Conference (IITC).

Process optimizations for NBTI/PBTI for future replacement metal gate technologies

Barry P. Linder, T. Ando, M. Wang, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).