P. J. Grunthaner

发表

Silicon-Compatible Infrared Sensors Based On Epitaxial Silicides

David N. Jamieson, J. H. Mazur, K. T. Chang, 1988, Photonics West - Lasers and Applications in Science and Engineering.

Chemical depth profiles of the GaAs/native oxide interface

F. J. Grunthaner, P. J. Grunthaner, F. Grunthaner, 1980 .

High-Resolution X-Ray Photoelectron Spectroscopy as a Probe of Local Atomic Structure: Application to Amorphous Si O 2 and the Si-Si O 2 Interface

Anupam Madhukar, B. F. Lewis, F. J. Grunthaner, 1979 .

Chemical and electronic structure of the SiO2/Si interface

F. J. Grunthaner, P. J. Grunthaner, F. Grunthaner, 1987 .

Chemical and Electronic Structure of the SiO2/Si Interface

F. J. Grunthaner, P. J. Grunthaner, F. Grunthaner, 1987 .

Growth of a delta‐doped silicon layer by molecular beam epitaxy on a charge‐coupled device for reflection‐limited ultraviolet quantum efficiency

Michael E. Hoenk, R. W. Terhune, Hsin-Fu Tseng, 1992 .

Radiation-Induced Defects in SiO2 as Determined with XPS

F. J. Grunthaner, J. Maserjian, P. J. Grunthaner, 1982, IEEE Transactions on Nuclear Science.

The localization and crystallographic dependence of Si suboxide species at the SiO2/Si interface

Frank J. Grunthaner, Michael H. Hecht, P. J. Grunthaner, 1987 .

Local atomic and electronic structure of oxide/GaAs and SiO2/Si interfaces using high-resolution XPS

Anupam Madhukar, B. F. Lewis, F. J. Grunthaner, 1979 .

Hydrogen-terminated silicon substrates for low-temperature molecular beam epitaxy

William J. Kaiser, J. H. Mazur, Frank J. Grunthaner, 1989 .

The MECA Wet Chemistry Laboratory on the 2007 Phoenix Mars Scout Lander

John Michael Morookian, Samuel P. Kounaves, Mark Weilert, 2009 .