R. P. Arrowsmith

Fine line multilayer substrates with very high density TAB

S. G. Tyler, K. Kurzweil, G. Dehaine, 1989, Proceedings. Japan IEMT Symposium, Sixth IEEE/CHMT International Electronic Manufacturing Technology Symposium.

Profiling of inhomogeneous carrier transport properties with the influence of temperature in silicon‐on‐insulator films formed by oxygen implantation

R. P. Arrowsmith, S. Cristoloveanu, J. Davis, 1986 .

Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantation

R. P. Arrowsmith, P. Hemment, M. Taylor, 1984 .

High quality silicon on insulator structures formed by the thermal redistribution of implanted nitrogen

R. P. Arrowsmith, R. F. Peart, J. Kilner, 1985 .

Silicon on insulator structures formed by the implantation of high doses of reactive ions

R. P. Arrowsmith, R. F. Peart, J. Kilner, 1985 .

SIMS and 18O tracer studies of the redistribution of oxygen in buried SiO 2 layers formed by high dose implantation

R. P. Arrowsmith, R. F. Peart, J. Kilner, 1985 .

Precipitation of oxygen in single-crystal silicon implanted with high doses of oxygen

R. P. Arrowsmith, J. Kilner, M. Wilson, 1985 .

SIMS analysis of buried silicon nitride layers formed by high dose implantation of 14N and 15N

R. P. Arrowsmith, R. F. Peart, J. Davis, 1986 .

Temperature dependence and non-uniformity of electrical properties of SOI films obtained by oxygen implantation

R. P. Arrowsmith, S. Cristoloveanu, P. Hemment, 1985 .