Le Dinh Trang Dang

Comparing Variation-tolerance and SEU/TID-Resilience of Three SRAM Cells in 28nm FD-SOI Technology: 6T, Quatro, and we-Quatro

Jin-Woo Han, Jinsang Kim, Le Dinh Trang Dang, 2020, 2020 IEEE International Reliability Physics Symposium (IRPS).

Studying the Variation Effects of Radiation Hardened Quatro SRAM Bit-Cell

Myounggon Kang, Jinsang Kim, Ik-Joon Chang, 2016, IEEE Transactions on Nuclear Science.