Ponky Ivo

Stable and reproducible AlGaN/GaN-HFET processing highly tolerant for epitaxial quality variations

P. Kurpas, Joachim Würfl, M. Schulz, 2010 .

Comparative study of AlGaN/GaN HEMTs robustness versus buffer design variations by applying Electroluminescence and electrical measurements

Christian Boit, Günther Tränkle, Joachim Würfl, 2011, Microelectron. Reliab..

New degradation mechanism observed for AlGaN/GaN HEMTs with sub 100 nm scale unpassivated regions around the gate periphery

Christian Boit, Günther Tränkle, Anna Mogilatenko, 2014, Microelectron. Reliab..

Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures

Christian Boit, Piotr Laskowski, Günther Tränkle, 2009, Microelectron. Reliab..

Single- and double-heterostructure GaN-HEMTs devices for power switching applications

Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini, 2012, Microelectronics and reliability.

Reliability issues of GaN based high voltage power devices

Frank Brunner, Matthias Schulz, Joachim Würfl, 2011, Microelectron. Reliab..

Influence of GaN cap on robustness of AlGaN/GaN HEMTs

Christian Boit, Joachim Wurfl, Arkadiusz Glowacki, 2009, 2009 IEEE International Reliability Physics Symposium.